HN7G09FE

Q1 (Transistor)
Collector-base voltage V_CBO ...............50 V
Collector-emitter voltage V_CEO ............50 V
Emitter-base voltage V_EBO ..................10 V
Collector current I_C ..........................100 mA
Q2 (MOSFET)
Drain-source voltage V_DS .....................20 V
Gate-source voltage V_GSS ................± 20 V
DC drain current DC I_D ......................100mA
DC drain current Pulse I_DP .................200mA
Q1, Q2 Common
Power dissipation PC (Note 1) ..........100 mW
Junction temperature Tj ........................150
Storage temperature range Tstg.. −55~150
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Total rating.