HN9C10FT

The HN9C10FT is designed as toshiba transistor silicon NPN epitaxial planar type for VHF, UHF band low noise amplifier applications. Two devices are built in to the super-thin and ultra super mini (6 pins) package: TU6.

The HN9C10FT's some absolute maximum ratings have been concluded into several points as follow. (1)Its collector to base voltage would be 15V. (2)Its collector to emitter voltage would be 7V. (3)Its emitter to base voltage would be 1.5V. (4)Its collector current would be 15mA. (5)Its base current would be 7mA. (6)Its  collector power dissipation would be 200mW. (7)Its junction temperature range would be 125°C. (8)Its storage temperature range would be from -55°C to 125°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of HN9C10FT are concluded as follow. (1)Its collector cutoff current would be max 1uA with conditions of Vcb=10V, Ie=0. (2)Its emitter cutoff current would be max 1uA with conditions of Veb=1V and Ic=0. (3)Its DC current gain would be min 50 and max 160 with conditions of Vce=5V and Ic=7mA. (4)Its transition frequency would be min 9GHz and typ 12GHz with conditions of Vce=5V and Ic=7mA. (5)Its insertion gain would be typ 13.5dB with conditions of Vce=5V, Ic=7mA and f=1000MHz and it would be min 5dB and typ 7.5dB with conditions of Vce=5V, Ic=7mA and f=2000MHz. (6)Its noise configure would be typ 1.4dB with condition of Vce=5V, Ic=3mA and f=1000MHz and it would be typ 1.7dB and max 3dB with condition of Vce=5V, Ic=3mA and f=2000MHz.

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