ApplicationQ1 (transistor) : 2SA1955 equivalentQ2 (S-MOS) : SSM3K04FU equivalentSpecificationsQ1 Absolute Maximum Ratings (Ta = 25) Characteristic Symbol Ratings Unit Collector-Emitter Voltage VCEO -15 V Collector-Base Voltage VCBO -12 V Emitter-Base Vol...
HN7G03FU: ApplicationQ1 (transistor) : 2SA1955 equivalentQ2 (S-MOS) : SSM3K04FU equivalentSpecificationsQ1 Absolute Maximum Ratings (Ta = 25) Characteristic Symbol Ratings Unit Collector-E...
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Transistors Bipolar (BJT) Vceo=-12V Vds=20V Ic=-400mA Id=50mA
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Transistors Bipolar (BJT) Vceo=-12V Vds=20V Ic=-400mA Id=50mA
Characteristic |
Symbol |
Ratings |
Unit |
Collector-Emitter Voltage |
VCEO |
-15 |
V |
Collector-Base Voltage |
VCBO |
-12 |
V |
Emitter-Base Voltage |
VEBO |
−5 |
V |
Collector current |
IC |
-400 |
mA |
Base current |
IB |
-50 |
Characteristic | Symbol | Rating | Unit |
Drain-source voltage | VDS | 20 | V |
Gate-source voltage | VGSS | 10 | V |
Drain current | ID | 100 | mA |
Characteristic |
Symbol |
Ratings |
Unit |
Power Dissipation |
P * |
200 |
mW |
Junction Temperature |
Tj |
125 |
|
Storage Temperature |
Tstg |
-55 to 125 |