HOA089X

The HOA088X/089X series consists of an infrared emitting diode facing an NPN silicon phototransistor encased in a black thermoplastic housing.

Phototransistor switching takes place whenever an opaque object passes through the slot between emitter and detector. HOA089X allows the user to choose from available options: (1) mounting tab configuration, (2) detector aperture size, (3) electro-optical characteristics, and (4) housing materials.

All devices employ a built-in strain relief for maximum wire attachment strength. The HOA088X series utilizes an IR transmissive polysulfone housing which features smooth optical faces without external aperture openings; this feature is desirable when apertureblockage from airborne contaminants is a possibility.

The HOA089X series employs an opaque polysulfone housing with aperture openings for use in applications in which maximum rejection of ambient light is important and in situations where maximum position resolution is desired. The HOA088X/089X series employs plastic molded components. For additional component information see SEP8506 and SDP8406.

Housing material of HOA089X is polysulfone. Housings are soluble in chlorinated hydrocarbons and ketones. Recommended cleaning agents are methanol and isopropanol.

The detector to emitter lead spacing is 0.32 in.(8.13 mm) for all versions. Wire color code and functions are: Red - IRED Anode White - Detector Collector Black - IRED Cathode Green - Detector Emitter To specify the complete product characteristics of HOA089X, see PART NUMBER GUIDE.