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HN7G07FU

PinoutSpecificationsQ1 Absolute Maximum Ratings (Ta = 25) Characteristic Symbol Rating Unit Collector-base voltage VCBO 15 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 5 V Collector current IC 500 mA Base current IB 50 mAQ2 Absolute Maxim...

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HN7G07FU: PinoutSpecificationsQ1 Absolute Maximum Ratings (Ta = 25) Characteristic Symbol Rating Unit Collector-base voltage VCBO 15 V Collector-emitter voltage VCEO 12 V Emitter-bas...

HN7G07FU Data Sheet

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Part Number:
HN7G07FU
Supply Ability:
5000

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  • 1~5000
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Upload time: 2024/12/21

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Product Details

Description



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Connection Diagram


Specifications

Q1 Absolute Maximum Ratings (Ta = 25)

Characteristic Symbol Rating Unit
Collector-base voltage VCBO 15 V
Collector-emitter voltage VCEO 12 V
Emitter-base voltage VEBO 5 V
Collector current IC 500 mA
Base current IB 50 mA

Q2 Absolute Maximum Ratings (Ta = 25)

Characteristic Symbol Rating Unit
Collector-base voltage VCBO 50 V
Collector-emitter voltage VCEO 50 V
Emitter-base voltage VEBO 10 V
Collector current IC 100 mA

Q1, Q2 Common Ratings (Ta = 25)
Characteristic Symbol Rating Unit
Collector power dissipation PC* 200 mW
Junction temperature Tj 150
Storage temperature range Tstg −55~150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ('Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

*: Total rating. 130 mW per element should not be exceeded.


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