STN1NC60, STN1NF10, STN1NF10-TR Selling Leads, Datasheet
MFG:ST Package Cooled:. D/C:SOT-223
STN1NC60, STN1NF10, STN1NF10-TR Datasheet download
Part Number: STN1NC60
MFG: ST
Package Cooled: .
D/C: SOT-223
MFG:ST Package Cooled:. D/C:SOT-223
STN1NC60, STN1NF10, STN1NF10-TR Datasheet download
MFG: ST
Package Cooled: .
D/C: SOT-223
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Datasheet: STN1NC60
File Size: 262101 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
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PDF/DataSheet Download
Datasheet: STN1NF10
File Size: 275431 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
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PDF/DataSheet Download
Datasheet: STN1802
File Size: 49507 KB
Manufacturer: STMicroelectronics
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The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.
Symbol | Parameter | Value | Unit |
VDS | Drain-source Voltage (VGS = 0) | 600 | V |
VDGR | Drain-gate Voltage (RGS = 20 k ) | 600 | V |
VGS | Gate- source Voltage | ± 30 | V |
ID | Drain Current (continuos) at TC = 25 |
0.3 | A |
ID | Drain Current (continuos) at TC = 100 | 0.18 | A |
IDM() | Drain Current (pulsed) | 1.2 | A |
PTOT | Total Dissipation at TC = 25 | 2.5 | W |
Derating Factor | 0.02 | W/ | |
dv/dt (1) | Peak Diode Recovery voltage slope | 3 | V/ns |
Tstg | Storage Temperature | 65 to 150 | |
Tj | Max. Operating Junction Temperature | 150 |
(•)Pulse width limited by safe operating area (1)ISD 12 A, di/dt 200 A/s, VDD V(BR)DSS, Tj TJMAX
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™"strip-based process. The resulting transistor shows extremely high packing density for low onresistance,rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Symbol | Parameter | Value | Unit |
VDS | Drain-source Voltage (VGS = 0) | 100 | V |
VDGR | Drain-gate Voltage (RGS = 20 k ) | 100 | V |
VGS | Gate- source Voltage | ± 20 | V |
ID | Drain Current (continuos) at TC = 25 |
1 |
A |
ID | Drain Current (continuos) at TC = 100 | 0.6 | A |
IDM() | Drain Current (pulsed) | 4 | A |
PTOT | Total Dissipation at TC = 25 | 2.5 | W |
Derating Factor | 0.02 | W/ | |
dv/dt (1) | Peak Diode Recovery voltage slope | 20 | V/ns |
EAS(2) | Single Pulse Avalanche Energy | 35 | mJ |
Tstg | Storage Temperature | 55to 150 | |
Tj | Max. Operating Junction Temperature | 55to 150 |
(`) Pulse width limited by safe operating area. (1) ISD1A, di/dt350A/s, VDD V(BR)DSS, Tj TJMAX (2) Starting Tj = 25 , ID = 1A, VDD = 70V