MFG:STMicroelectronics (VA) Category:Discrete Semiconductor Products Package Cooled:04+ D/C:SOT-223
STN1N20, STN1N20-TR, STN1NB80 Datasheet download
Category: Discrete Semiconductor Products
MFG: STMicroelectronics (VA)
Package Cooled: 04+
D/C: SOT-223
Description: MOSFET N-CH 200V 1A SOT223
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PDF/DataSheet Download
Datasheet: STN1N20
File Size: 46534 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: STN1802
File Size: 49507 KB
Manufacturer: STMicroelectronics
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PDF/DataSheet Download
Datasheet: STN1NB80
File Size: 89356 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
| Technical/Catalog Information | STN1N20 |
| Vendor | STMicroelectronics (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25° C | 1A |
| Rds On (Max) @ Id, Vgs | 1.5 Ohm @ 500mA, 10V |
| Input Capacitance (Ciss) @ Vds | 206pF @ 25V |
| Power - Max | 2.9W |
| Packaging | Digi-Reel? |
| Gate Charge (Qg) @ Vgs | 15.7nC @ 10V |
| Package / Case | SOT-223, SC-73, TO-261 (3 Leads + Tab) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STN1N20 STN1N20 497 3176 6 ND 49731766ND 497-3176-6 |
| Symbol | Parameter | Value | Unit |
| VDS | Drain-source Voltage (VGS = 0) | 200 | V |
| VDGR | Drain-gate Voltage (RGS = 20 k ) | 200 | V |
| VGS | Gate- source Voltage | ±20 | V |
| ID(*) | Drain Current (continuos) at TC = 25 |
1 |
A |
| ID(*) | Drain Current (continuos) at TC = 100 | 0.6 | A |
| IDM() | Drain Current (pulsed) | 4 | A |
| PTOT | Total Dissipation at TC = 25 | 2.9 | W |
| Derating Factor | 0.023 | W/ | |
| Tstg | Storage Temperature | 65 to 150 | |
| Tj | Max. Operating Junction Temperature | 150 |
Using the latest high voltage MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
| Symbol | Parameter | Value | Unit |
| VDS | Drain-source Voltage (VGS = 0) | 800 | V |
| VDGR | Drain-gate Voltage (RGS = 20 k ) | 800 | V |
| VGS | Gate- source Voltage | ± 30 | V |
| ID | Drain Current (continuos) at TC = 25 |
0.2 | A |
| ID | Drain Current (continuos) at TC = 100 | 0.12 | A |
| IDM() | Drain Current (pulsed) | 0.8 | A |
| PTOT | Total Dissipation at TC = 25 | 2.9 | W |
| Derating Factor | 0.02 | W/ | |
| dv/dt (1) | Peak Diode Recovery voltage slope | 4 | V/ns |
| Tstg | Storage Temperature | 65 to 150 | |
| Tj | Max. Operating Junction Temperature | 150 |
(`) Pulse width limited by safe operating area (1) ISD 12 A, di/dt 200 A/s, VDD V(BR)DSS, Tj TJMAX
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