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The SuperMESH™ series is obtained through an extreme optimization of ST's well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
STN1NK60Z Maximum Ratings
Symbol
Parameter
Value
Unit
IPAK
TO-92
SOT-223
VDS
Collector-Source Voltage (VGS = 0 V)
600
V
VDGR
Drain-gate Voltage (RGS = 20 k)
600
V
VGS
Gate-Source Voltage
±30
V
ID
Drain Current (continuous) at TC = 25
0.8
0.3
0.3
A
ID
Drain Current (continuous) at TC = 100
0.5
0.189
0.189
A
IDM(`)
Drain Current (pulsed)
3.2
1.2
1.2
A
PTOT
Total Dissipation at TC = 25
25
3
3.3
W
Derating Factor
0.24
0.025
0.026
W/
VESD(G-S)
Gate source ESD(HBM-C=100pF, R=1.5K)
800
V
dv/dt(1)
Peak Diode Recovery voltage slope
4.5
V/ns
Tj Tstg
Operating Junction Temperature Storage Temperature