MOSFET N-Ch 800 Volt 1 Amp
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 800 V | ||
Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 0.2 A | ||
Resistance Drain-Source RDS (on) : | 20 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOT-223 | Packaging : | Reel |
Symbol | Parameter | Value | Unit |
VDS | Drain-source Voltage (VGS = 0) | 800 | V |
VDGR | Drain-gate Voltage (RGS = 20 k ) | 800 | V |
VGS | Gate- source Voltage | ± 30 | V |
ID | Drain Current (continuos) at TC = 25 |
0.2 | A |
ID | Drain Current (continuos) at TC = 100 | 0.12 | A |
IDM() | Drain Current (pulsed) | 0.8 | A |
PTOT | Total Dissipation at TC = 25 | 2.9 | W |
Derating Factor | 0.02 | W/ | |
dv/dt (1) | Peak Diode Recovery voltage slope | 4 | V/ns |
Tstg | Storage Temperature | 65 to 150 | |
Tj | Max. Operating Junction Temperature | 150 |
(`) Pulse width limited by safe operating area (1) ISD 12 A, di/dt 200 A/s, VDD V(BR)DSS, Tj TJMAX
Using the latest high voltage STN1NB80 MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.