Transistors Bipolar (BJT) NPN Fast Switching
STN1802: Transistors Bipolar (BJT) NPN Fast Switching
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 60 V |
Emitter- Base Voltage VEBO : | 6 V | Maximum DC Collector Current : | 3 A |
DC Collector/Base Gain hfe Min : | 200 at 100 mA at 2 V | Configuration : | Single Dual Collector |
Maximum Operating Frequency : | 150 MHz | Maximum Operating Temperature : | + 150 C |
Mounting Style : | SMD/SMT | Package / Case : | SOT-223 |
Packaging : | Reel |
Symbol |
Parameter |
Value |
Unit |
VCBO |
Collector-Base Voltage (IE = 0) |
80 |
V |
VCEO |
Collector-Emitter Voltage (IB = 0) |
60 |
V |
VEBO |
Emitter-Base Voltage(IC = 0) |
6 |
V |
IC |
Collector Current |
3 |
A |
ICM |
Collector Peak Current (tp < 5 ms) |
6 |
A |
IB |
Base Current |
1 |
A |
Ptot |
Total Dissipation at Tamb = 25 |
1.6 |
W |
Tstg |
Storage Temperature |
-65 to 150 |
|
Tj |
Max. Operating Junction Temperature |
150 |
The STN1802 is manufactured in NPN Planar Technology by using a "Base Island" layout.
The resulting Transistor shows exceptional high gain performance coupled with very low saturation voltage.