STN1N20

MOSFET N-Ch 200 Volt 1 Amp

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SeekIC No. : 00151685 Detail

STN1N20: MOSFET N-Ch 200 Volt 1 Amp

floor Price/Ceiling Price

US $ .33~.55 / Piece | Get Latest Price
Part Number:
STN1N20
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $.55
  • $.43
  • $.38
  • $.33
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/4

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 1 A
Resistance Drain-Source RDS (on) : 1500 mOhms Configuration : Single Dual Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOT-223 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 200 V
Package / Case : SOT-223
Configuration : Single Dual Drain
Continuous Drain Current : 1 A
Resistance Drain-Source RDS (on) : 1500 mOhms


Features:

TYPICAL RDS(on) = 1.2
AVALANCHERUGGED TECHNOLOGY
SOT-223CAN BE WAVE OR REFLOW SOLDERED
AVAILABLEIN TAPEAND REEL ON REQUEST
150  OPERATINGTEMPERATURE
APPLICATIONORIENTED CHARACTERIZATION



Application

 HARD DISK DRIVERS
SMALLMOTOR CURRENT SENSE CIRCUITS
DC-DC CONVERTERS AND POWER SUPPLIES



Specifications

Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 200 V
VDGR Drain-gate Voltage (RGS = 20 k ) 200 V
VGS Gate- source Voltage ±20 V
ID(*) Drain Current (continuos) at TC = 25
1
A
ID(*) Drain Current (continuos) at TC = 100 0.6 A
IDM() Drain Current (pulsed) 4 A
PTOT Total Dissipation at TC = 25 2.9 W
  Derating Factor 0.023 W/
Tstg Storage Temperature 65 to 150
Tj Max. Operating Junction Temperature 150
(•) Pulse width limited by safe operating area (*) Limite d by package


Parameters:

Technical/Catalog InformationSTN1N20
VendorSTMicroelectronics (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C1A
Rds On (Max) @ Id, Vgs1.5 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 206pF @ 25V
Power - Max2.9W
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs15.7nC @ 10V
Package / CaseSOT-223, SC-73, TO-261 (3 Leads + Tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STN1N20
STN1N20
497 3176 6 ND
49731766ND
497-3176-6



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