MOSFET N-Ch 200 Volt 1 Amp
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 200 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 1 A | ||
Resistance Drain-Source RDS (on) : | 1500 mOhms | Configuration : | Single Dual Drain | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOT-223 | Packaging : | Reel |
Symbol | Parameter | Value | Unit |
VDS | Drain-source Voltage (VGS = 0) | 200 | V |
VDGR | Drain-gate Voltage (RGS = 20 k ) | 200 | V |
VGS | Gate- source Voltage | ±20 | V |
ID(*) | Drain Current (continuos) at TC = 25 |
1 |
A |
ID(*) | Drain Current (continuos) at TC = 100 | 0.6 | A |
IDM() | Drain Current (pulsed) | 4 | A |
PTOT | Total Dissipation at TC = 25 | 2.9 | W |
Derating Factor | 0.023 | W/ | |
Tstg | Storage Temperature | 65 to 150 | |
Tj | Max. Operating Junction Temperature | 150 |
Technical/Catalog Information | STN1N20 |
Vendor | STMicroelectronics (VA) |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25° C | 1A |
Rds On (Max) @ Id, Vgs | 1.5 Ohm @ 500mA, 10V |
Input Capacitance (Ciss) @ Vds | 206pF @ 25V |
Power - Max | 2.9W |
Packaging | Digi-Reel? |
Gate Charge (Qg) @ Vgs | 15.7nC @ 10V |
Package / Case | SOT-223, SC-73, TO-261 (3 Leads + Tab) |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | STN1N20 STN1N20 497 3176 6 ND 49731766ND 497-3176-6 |