MFG:STMicroelectronics (VA) Category:Discrete Semiconductor Products Package Cooled:05+ D/C:SOT-223
STN1NK80Z, STN2222AS, STN2222S Datasheet download
Category: Discrete Semiconductor Products
MFG: STMicroelectronics (VA)
Package Cooled: 05+
D/C: SOT-223
Description: MOSFET N-CH 800V 250MA SOT223
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Datasheet: STN1NK80Z
File Size: 394963 KB
Manufacturer: STMicroelectronics
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PDF/DataSheet Download
Datasheet: STN1802
File Size: 49507 KB
Manufacturer: STMicroelectronics
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PDF/DataSheet Download
Datasheet: STN1802
File Size: 49507 KB
Manufacturer: STMicroelectronics
Download : Click here to Download
| Technical/Catalog Information | STN1NK80Z |
| Vendor | STMicroelectronics (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 800V |
| Current - Continuous Drain (Id) @ 25° C | 250mA |
| Rds On (Max) @ Id, Vgs | 16 Ohm @ 500mA, 10V |
| Input Capacitance (Ciss) @ Vds | 160pF @ 25V |
| Power - Max | 2.5W |
| Packaging | Cut Tape (CT) |
| Gate Charge (Qg) @ Vgs | 7.7nC @ 10V |
| Package / Case | SOT-223, SC-73, TO-261 (3 Leads + Tab) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STN1NK80Z STN1NK80Z 497 4669 1 ND 49746691ND 497-4669-1 |
The SuperMESH™ series is obtained through an extreme optimization of ST's well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
| Symbol | Parameter | Value | Unit | ||
| TO-92 | SOT-223 | DPAK/IPAK | |||
| VDS | Drain-source Voltage (VGS = 0) | 800 | V | ||
| VDGR | Drain-gate Voltage (RGS = 20 k) | 800 | V | ||
| VGS | Gate- source Voltage | ± 30 | V | ||
| ID | Drain Current (continuous) at TC = 25°C | 0.3 | 0.25 | 1.0 | A |
| ID | Drain Current (continuous) at TC = 100°C | 0.19 | 0.16 | 0.63 | A |
| IDM (`) | Drain Current (pulsed) | 5 | A | ||
| PTOT | Total Dissipation at TC = 25°C | 3 | 2 | 45 | W |
| Derating Factor | 0.025 | 0.02 | 0.36 | W /°C | |
| VESD(G-S) | Gate source ESD (HBM-C= 100pF, R= 1.5K) | 1000 | V | ||
| dv/dt (1) | Peak Diode Recovery voltage slope | 4.5 | V/ns | ||
| Tj Tstg |
Operating Junction Temperature Storage Temperature |
-55 to 150 | °C | ||
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