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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 600 V | ||
Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 0.3 A | ||
Resistance Drain-Source RDS (on) : | 15 Ohms | Configuration : | Single Dual Drain | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOT-223 | Packaging : | Reel |
Symbol | Parameter | Value | Unit |
VDS | Drain-source Voltage (VGS = 0) | 600 | V |
VDGR | Drain-gate Voltage (RGS = 20 k ) | 600 | V |
VGS | Gate- source Voltage | ± 30 | V |
ID | Drain Current (continuos) at TC = 25 |
0.3 | A |
ID | Drain Current (continuos) at TC = 100 | 0.18 | A |
IDM() | Drain Current (pulsed) | 1.2 | A |
PTOT | Total Dissipation at TC = 25 | 2.5 | W |
Derating Factor | 0.02 | W/ | |
dv/dt (1) | Peak Diode Recovery voltage slope | 3 | V/ns |
Tstg | Storage Temperature | 65 to 150 | |
Tj | Max. Operating Junction Temperature | 150 |
(•)Pulse width limited by safe operating area (1)ISD 12 A, di/dt 200 A/s, VDD V(BR)DSS, Tj TJMAX
The STN1NC60 PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.