MOSFET N-Ch 100 Volt 1 Amp
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 100 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 1 A | ||
Resistance Drain-Source RDS (on) : | 0.8 Ohms | Configuration : | Single Dual Drain | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOT-223 | Packaging : | Reel |
Symbol | Parameter | Value | Unit |
VDS | Drain-source Voltage (VGS = 0) | 100 | V |
VDGR | Drain-gate Voltage (RGS = 20 k ) | 100 | V |
VGS | Gate- source Voltage | ± 20 | V |
ID | Drain Current (continuos) at TC = 25 |
1 |
A |
ID | Drain Current (continuos) at TC = 100 | 0.6 | A |
IDM() | Drain Current (pulsed) | 4 | A |
PTOT | Total Dissipation at TC = 25 | 2.5 | W |
Derating Factor | 0.02 | W/ | |
dv/dt (1) | Peak Diode Recovery voltage slope | 20 | V/ns |
EAS(2) | Single Pulse Avalanche Energy | 35 | mJ |
Tstg | Storage Temperature | 55to 150 | |
Tj | Max. Operating Junction Temperature | 55to 150 |
(`) Pulse width limited by safe operating area. (1) ISD1A, di/dt350A/s, VDD V(BR)DSS, Tj TJMAX (2) Starting Tj = 25 , ID = 1A, VDD = 70V
This Power MOSFET STN1NF10 is the latest development of STMicroelectronis unique "Single Feature Size™"strip-based process. The resulting transistor shows extremely high packing density for low onresistance,rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.