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RMPA0913C-58, RMPA0951102, RMPA0951-102

RMPA0913C-58, RMPA0951102, RMPA0951-102 Selling Leads, Datasheet

MFG:RAYTHEON  Package Cooled:QFP  D/C:2001

RMPA0913C-58, RMPA0951102, RMPA0951-102 Picture

RMPA0913C-58, RMPA0951102, RMPA0951-102 Datasheet download

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Part Number: RMPA0913C-58

 

MFG: RAYTHEON

Package Cooled: QFP

D/C: 2001

 

 

 
 
 
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About RMPA0913C-58

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Datasheet: RMPA0913C-58

File Size: 263177 KB

Manufacturer: ETC [ETC]

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About RMPA0913C-58

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Datasheet: RMPA0913C-58

File Size: 263177 KB

Manufacturer: ETC [ETC]

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About RMPA0913C-58

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Datasheet: RMPA0913C-58

File Size: 263177 KB

Manufacturer: ETC [ETC]

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RMPA0913C-58 General Description

The RMPA0913C-58 is a monolithic high efficiency power amplifier for AMPS/CDMA dual mode applications in the
824 to 849 MHz frequency band. Performance parameters may be slightly adjusted by "tweaking" off-chip
matching components. The amplifier circuit design is a single ended configuration that utilizes harmonic tuning for
increased power added efficiency and linearity.The device uses Raytheon's Pseudomorphic High Electron Mobility
Transistor (pHEMT) process.

RMPA0913C-58 Maximum Ratings

Parameter Symbol Value Unit
Positive DC Voltage Vd1,Vd2 +9 Volts
Negative DC Voltage Vg1,Vg2 -6 Volts
Simultaneous (Vd-Vg) Vdg +12 Volts
RF Input Power (from 50-Ohm source) PIN +10 dBm
Operating Case Temperature (Case) TC -30 to 110
Storage Temperature Range Tstg -35 to 110
Thermal Resistance RTj-c 15 /W

RMPA0913C-58 Features

· Positive supply voltage of 3.5V, nominal
· Power Added Efficiency of 56%, typical, at power out of 31.5 dBm
· Power Added Efficiency of 40%, typical, for CDMA power out of 28.5 dBm
· Small outline metal based quad plastic package

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