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The RMPA1959 power amplifier module (PAM) is designed for CDMA and CDMA2000-1X personal communications system (PCS) applications. The 2 stage PAM is internally matched to 50 to minimize the use of external components and features advanced DC power management to reduce current consumption during peak phone usage. High power-added efficiency and excellent linearity are achieved using our InGaP Heterojunction Bipolar Transistor (HBT) technology.
RMPA1959 Maximum Ratings
Symbol
Parameter
Min
Max
Units
VCC1, VCC2
Supply Voltages
0
5.0
V
Vref
Reference Voltage
2.6
3.5
V
Vmode
Power Control Voltage
0
3.5
V
Pin
RF Input Power
+10
dBm
TSTG
Storage Temperature
-55
+150
Note: 1: No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values.
RMPA1959 Features
• Single positive-supply operation and low power and shutdown modes • 39% CDMA efficiency at +28dBm average output power • Compact LCC package- 4.0 x 4.0 x 1.5 mm with industry standard pinout • Internally matched to 50 and DC blocked RF input/ output. • Meets CDMA2000-1XRTT performance requirements