RMPA1951, RMPA1951102, RMPA1951-102 Selling Leads, Datasheet
MFG:N/A Package Cooled:QFP D/C:01+
RMPA1951, RMPA1951102, RMPA1951-102 Datasheet download
Part Number: RMPA1951
MFG: N/A
Package Cooled: QFP
D/C: 01+
MFG:N/A Package Cooled:QFP D/C:01+
RMPA1951, RMPA1951102, RMPA1951-102 Datasheet download
MFG: N/A
Package Cooled: QFP
D/C: 01+
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PDF/DataSheet Download
Datasheet: RMPA1951-102
File Size: 210638 KB
Manufacturer: RAYTHEON [Raytheon Company]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: RMPA0913C-58
File Size: 263177 KB
Manufacturer: ETC [ETC]
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PDF/DataSheet Download
Datasheet: RMPA1951-102
File Size: 210638 KB
Manufacturer: RAYTHEON [Raytheon Company]
Download : Click here to Download
The RMPA1951-102 is a small-outline, power amplifier module (PAM) for CDMA Personal Communication System
(PCS) and Wireless Local Loop (WLL) applications. Advanced DC power management provides an effective
means to reduce current consumption during peak phone usage at backed-off RF power levels. Analog or digital
bias control enables the handset designer to optimize gain, linearity and power-added efficiency over a wide range
of output powers, depending on the power-density profile of the wireless network. High power-added efficiency and
excellent linearity are achieved using Raytheon's Heterojunction Bipolar Transistor (HBT) process.
Parameter | Symbol | Min | Typical | Max | Units |
Supply Voltage | Vcc | 3.5 | 6 | V | |
Reference Voltage | Vref | 1.5 | 2.7 | 4.0 | V |
RF Input Power2 | Pin | +1 | +7 | dBm | |
Load VSWR | VSWR | 1.2:1 | 10:1 | ||
Case Operating Temperature | Tc | -40 | +25 | +110 | |
Storage Temperature | Tstg | -55 | +25 | +150 |