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The RMPA2550 is a dual frequency band power amplifier designed for high performance WLAN applications in the 2.4-2.5 GHz and the 5.15-5.85 GHz frequency bands. The single low profile 20 pin 3 x 4 x 0.9 mm package with internal matching on both input and output to 50 minimizes next level PCB space and allows for simplified integration. The two on-chip detectors provide power sensing capability while the logic control provides power saving shutdown options. The PA's low power consumption and excellent linearity are achieved using our InGaP Heterojunction Bipolar Transistor (HBT) technology.
RMPA2550 Maximum Ratings
Symbol
Parameter
Value
Units
VC
Positive Supply Voltage
5
V
IC2.4, IC5.0
Supply Current IC2.4 IC5.0
820 700
mA mA
VM
Positive Bias Voltage
4.0
V
VL
Logic Voltage
5
V
PIN
RF Input Power
10
dBm
TCASE
Case Operating Temperature
-40 to +85
TSTG
Storage Temperature
-55 to +150
Note: 1. No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values.
RMPA2550 Features
• Dual band operation in a single package design • 26 dB modulated gain 2.4 to 2.5 GHz band • 27 dB modulated gain 5.15 to 5.85 GHz band • 26 dBm output power @ 1 dB compression both frequency bands • 2.0% EVM at 18 dBm modulated Pout, 2.45 GHz • 2.3% EVM at 18 dBm modulated Pout, 5.45 GHz • 3.3 V single positive supply operation • Adjustable bias current operation • Two power saving shutdown options (bias and logic control) • Separate integrated power detectors with 20 dB dynamic range • Low profile 20 pin, 3 x 4 x 0.9 mm standard QFN leadless package • Internally matched to 50 ohms • Optimized for use in 802.11a/b/g applications