MFG:Fairchild Semiconductor (VA) Category:RF and RFID Package Cooled:QFN D/C:07+
RMPA0967, RMPA-1620B-121, RMPA1759 Datasheet download
Category: RF and RFID
MFG: Fairchild Semiconductor (VA)
Package Cooled: QFN
D/C: 07+
Description: IC MODULE RF PWR AMP 8PIN 3X3LCC
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PDF/DataSheet Download
Datasheet: RMPA0967
File Size: 145569 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: RMPA0913C-58
File Size: 263177 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: RMPA1759
File Size: 555364 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
| Technical/Catalog Information | RMPA0967 |
| Vendor | Fairchild Semiconductor (VA) |
| Category | RF and RFID |
| Package / Case | 8-LCC |
| Voltage - Supply | 3V ~ 4.2V |
| Current - Supply | 60mA |
| Gain | 28dB |
| Frequency | 824MHz ~ 849MHz |
| RF Type | Cellular, CDMA, CDMA2000, AMPS, IS-95, HSDPA |
| Packaging | Digi-Reel? |
| Noise Figure | - |
| P1db | - |
| Test Frequency | - |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | RMPA0967 RMPA0967 RMPA0967DKR ND RMPA0967DKRND RMPA0967DKR |
The RMPA0967 power amplifier module (PAM) is designed for cellular band AMPS, CDMA, CDMA2000-1X, WCDMA and HSDPA applications. The 2 stage PAM is internally matched to 50 Ohms to minimize the use of external components and features a low-power mode to reduce standby current and DC power consumption during peak phone usage. High poweradded efficiency and excellent linearity are achieved using Fairchild RF's InGaP Heterojunction Bipolar Transistor (HBT) process.
| Parameter | Symbol | Value | Units |
| Supply Voltages | Vcc1, Vcc2 | 5.0 | V |
| Reference Voltage | Vref | 2.6 to 3.5 | V |
| Power Control Voltage | Vmode | 3.5 | V |
| RF Input Power | Pin | +10 | dBm |
| Storage Temperature | Tstg | -55 to +150 |
The RMPA1759 power amplifier module (PAM) is designed for Korean CDMA and CDMA2000-1X personal communications system (PCS) applications. The 2 stage PAM is internally matched to 50 to minimize the use of external components and features a low-power mode to reduce standby current and DC power consumption during peak phone usage. High power-added efficiency and excellent linearity are achieved using our InGaP Heterojunction Bipolar Transistor (HBT) process.
| Symbol | Parameter | Ratings | Units |
| VCC1, VCC2 | Supply Voltages | 5.0 | V |
| Vref |
Reference Voltage | 2.6 to 3.5 | V |
| Vmode | Power Control Voltage | 3.5 | V |
| Pin | RF Input Power | +10 | dBm |
| TSTG | Storage Temperature | -55 to +150 |
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