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RMPA2263, RMPA2450, RMPA2450-58

RMPA2263, RMPA2450, RMPA2450-58 Selling Leads, Datasheet

MFG:Fairchild  Package Cooled:QFN-10  D/C:05+

RMPA2263, RMPA2450, RMPA2450-58 Picture

RMPA2263, RMPA2450, RMPA2450-58 Datasheet download

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Part Number: RMPA2263

 

MFG: Fairchild

Package Cooled: QFN-10

D/C: 05+

 

 

 
 
 
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About RMPA2263

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Datasheet: RMPA2263

File Size: 139007 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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About RMPA2450

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Datasheet: RMPA2450

File Size: 159070 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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About RMPA0913C-58

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Datasheet: RMPA0913C-58

File Size: 263177 KB

Manufacturer: ETC [ETC]

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RMPA2263 General Description

The RMPA2263 Power Amplifier Module (PAM) is Fairchild's latest innovation in 50 Ohm matched, surface mount modules targeting UMTS/WCDMA/HSDPA applications. Answering the call for ultra-low DC power consumption and extended battery life in portable electronics, the RMPA2263 uses novel proprietary circuitry to dramatically reduce amplifier current at low to medium RF output power levels (< +16 dBm), where the handset most often operates. A simple two-state Vmode control is all that is needed to reduce operating current by more than 50% at 16 dBm output power, and quiescent current (Iccq) by as much as 70% compared to traditional power-saving methods. No additional circuitry, such as DC-to-DC converters, are required to achieve this remarkable improvement in amplifier efficiency. Further, the 4x4 x 1.5 mm LCC package is pin-compatible and a drop-in replacement for last generation 4x 4 mm PAMs widely used today, minimizing the design time to apply this performance-enhancing technology. The multi-stage GaAs Microwave Monolithic Integrated Circuit (MMIC) is manufactured using Fairchild RF's InGaP Heterojunction Bipolar Transistor (HBT) process.

RMPA2263 Maximum Ratings

Symbol Parameter Value Units
VCC1, VCC2 Supply Voltages 5.0 V
Vref
Reference Voltage 2.6 to 3.5 V
Vmode Power Control Voltage 3.5 V
Pin RF Input Power +10 dBm
Tstg Storage Temperature -55 to +150
Note:
1: No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values.

RMPA2263 Features

` 40% WCDMA efficiency at +28 dBm Pout
` 14% WCDMA efficiency (85 mA total current) at +16 dBm Pout
` Linear operation in low-power mode up to +19 dBm
` Low quiescent current (Iccq): 25 mA in low-power mode
` Meets UMTS/WCDMA performance requirements
` Meets HSDPA performance requirements
` Single positive-supply operation with low power and shutdown modes
3.4V typical Vcc operation
Low Vref (2.85V) compatible with advanced handset chipsets
` Compact Lead-free compliant LCC package (4.0 x 4.0 x 1.5 mm nominal)
` Industry standard pinout
` Internally matched to 50 Ohms and DC blocked RF input/ output

RMPA2450 General Description

The Fairchild RMPA2450 is a fully monolithic power amplifier in a surface mount package for use in wireless applications in the 2.4 to 2.5GHz ISM frequency band. The amplifier may be biased for linear, class AB or class F for high efficiency applications. On-chip matching components allow operation in a 50  system with no external matching components. The MMIC chip design utilizes our 0.25m power PHEMT process.

RMPA2450 Maximum Ratings

Symbol Parameter Min Units
Vd1, Vd2 Positive Drain DC Voltage +8 V
Vg1, Vg2 Negative Gate DC Voltage -5 V
VdVg Simultaneous Drain to Gate Voltage +10 V
PIN
RF Input Power (from 50source)

+10 dBm
Ids Drain to Source Current 575 mA
Ig
Gate Current 5 mA
Tch
Channel Temperature 150
TCASE

Operating Case Temperature -40 to 100
TSTG

Storage Temperature Range -40 to 125

RMPA2450 Features

•35% Power Added Efficiency
• 31dBm Output Power (P1dB) at Vd = +7V
• 28dBm Output Power (P1dB) at Vd = +5V
• No external RF matching components
• Small Package Outline: 0.28" x 0.28" x 0.07"
• Thermal Resistance (Channel to Case): 33/W

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