RMPA2263, RMPA2450, RMPA2450-58 Selling Leads, Datasheet
MFG:Fairchild Package Cooled:QFN-10 D/C:05+
RMPA2263, RMPA2450, RMPA2450-58 Datasheet download
Part Number: RMPA2263
MFG: Fairchild
Package Cooled: QFN-10
D/C: 05+
MFG:Fairchild Package Cooled:QFN-10 D/C:05+
RMPA2263, RMPA2450, RMPA2450-58 Datasheet download
MFG: Fairchild
Package Cooled: QFN-10
D/C: 05+
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PDF/DataSheet Download
Datasheet: RMPA2263
File Size: 139007 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
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PDF/DataSheet Download
Datasheet: RMPA2450
File Size: 159070 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: RMPA0913C-58
File Size: 263177 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
The RMPA2263 Power Amplifier Module (PAM) is Fairchild's latest innovation in 50 Ohm matched, surface mount modules targeting UMTS/WCDMA/HSDPA applications. Answering the call for ultra-low DC power consumption and extended battery life in portable electronics, the RMPA2263 uses novel proprietary circuitry to dramatically reduce amplifier current at low to medium RF output power levels (< +16 dBm), where the handset most often operates. A simple two-state Vmode control is all that is needed to reduce operating current by more than 50% at 16 dBm output power, and quiescent current (Iccq) by as much as 70% compared to traditional power-saving methods. No additional circuitry, such as DC-to-DC converters, are required to achieve this remarkable improvement in amplifier efficiency. Further, the 4x4 x 1.5 mm LCC package is pin-compatible and a drop-in replacement for last generation 4x 4 mm PAMs widely used today, minimizing the design time to apply this performance-enhancing technology. The multi-stage GaAs Microwave Monolithic Integrated Circuit (MMIC) is manufactured using Fairchild RF's InGaP Heterojunction Bipolar Transistor (HBT) process.
Symbol | Parameter | Value | Units |
VCC1, VCC2 | Supply Voltages | 5.0 | V |
Vref |
Reference Voltage | 2.6 to 3.5 | V |
Vmode | Power Control Voltage | 3.5 | V |
Pin | RF Input Power | +10 | dBm |
Tstg | Storage Temperature | -55 to +150 |
The Fairchild RMPA2450 is a fully monolithic power amplifier in a surface mount package for use in wireless applications in the 2.4 to 2.5GHz ISM frequency band. The amplifier may be biased for linear, class AB or class F for high efficiency applications. On-chip matching components allow operation in a 50 system with no external matching components. The MMIC chip design utilizes our 0.25m power PHEMT process.
Symbol | Parameter | Min | Units |
Vd1, Vd2 | Positive Drain DC Voltage | +8 | V |
Vg1, Vg2 | Negative Gate DC Voltage | -5 | V |
VdVg | Simultaneous Drain to Gate Voltage | +10 | V |
PIN |
RF Input Power (from 50source) |
+10 | dBm |
Ids | Drain to Source Current | 575 | mA |
Ig |
Gate Current | 5 | mA |
Tch |
Channel Temperature | 150 | |
TCASE |
Operating Case Temperature | -40 to 100 | |
TSTG |
Storage Temperature Range | -40 to 125 |