Features: · Positive supply voltage of 3.5V, nominal· Power Added Efficiency of 56%, typical, at power out of 31.5 dBm· Power Added Efficiency of 40%, typical, for CDMA power out of 28.5 dBm· Small outline metal based quad plastic packageSpecifications Parameter Symbol Value Unit Positi...
RMPA0913C-58: Features: · Positive supply voltage of 3.5V, nominal· Power Added Efficiency of 56%, typical, at power out of 31.5 dBm· Power Added Efficiency of 40%, typical, for CDMA power out of 28.5 dBm· Small ...
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Parameter | Symbol | Value | Unit |
Positive DC Voltage | Vd1,Vd2 | +9 | Volts |
Negative DC Voltage | Vg1,Vg2 | -6 | Volts |
Simultaneous (Vd-Vg) | Vdg | +12 | Volts |
RF Input Power (from 50-Ohm source) | PIN | +10 | dBm |
Operating Case Temperature (Case) | TC | -30 to 110 | |
Storage Temperature Range | Tstg | -35 to 110 | |
Thermal Resistance | RTj-c | 15 | /W |
The RMPA0913C-58 is a monolithic high efficiency power amplifier for AMPS/CDMA dual mode applications in the
824 to 849 MHz frequency band. Performance parameters may be slightly adjusted by "tweaking" off-chip
matching components. The amplifier circuit design is a single ended configuration that utilizes harmonic tuning for
increased power added efficiency and linearity.The device uses Raytheon's Pseudomorphic High Electron Mobility
Transistor (pHEMT) process.