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RMPA0913C-58

Features: · Positive supply voltage of 3.5V, nominal· Power Added Efficiency of 56%, typical, at power out of 31.5 dBm· Power Added Efficiency of 40%, typical, for CDMA power out of 28.5 dBm· Small outline metal based quad plastic packageSpecifications Parameter Symbol Value Unit Positi...

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RMPA0913C-58: Features: · Positive supply voltage of 3.5V, nominal· Power Added Efficiency of 56%, typical, at power out of 31.5 dBm· Power Added Efficiency of 40%, typical, for CDMA power out of 28.5 dBm· Small ...

RMPA0913C-58 Data Sheet

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Part Number:
RMPA0913C-58
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Features:

· Positive supply voltage of 3.5V, nominal
· Power Added Efficiency of 56%, typical, at power out of 31.5 dBm
· Power Added Efficiency of 40%, typical, for CDMA power out of 28.5 dBm
· Small outline metal based quad plastic package


Specifications

Parameter Symbol Value Unit
Positive DC Voltage Vd1,Vd2 +9 Volts
Negative DC Voltage Vg1,Vg2 -6 Volts
Simultaneous (Vd-Vg) Vdg +12 Volts
RF Input Power (from 50-Ohm source) PIN +10 dBm
Operating Case Temperature (Case) TC -30 to 110
Storage Temperature Range Tstg -35 to 110
Thermal Resistance RTj-c 15 /W



Description

The RMPA0913C-58 is a monolithic high efficiency power amplifier for AMPS/CDMA dual mode applications in the
824 to 849 MHz frequency band. Performance parameters may be slightly adjusted by "tweaking" off-chip
matching components. The amplifier circuit design is a single ended configuration that utilizes harmonic tuning for
increased power added efficiency and linearity.The device uses Raytheon's Pseudomorphic High Electron Mobility
Transistor (pHEMT) process.




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