Position: Home > DataSheet > Index R > RMP Series > RMPA1963, RMPA1964, RMPA1965

Low Cost Custom Prototype PCB Manufacturer

RMPA1963, RMPA1964, RMPA1965

Table of contents:
Info of RMPA1963
Info of RMPA1964
Info of RMPA1965

RMPA1963, RMPA1964, RMPA1965 Selling Leads, Datasheet

MFG:Fairchild Semiconductor (VA) Category:RF and RFID Package Cooled:QFN-10 D/C:05+

RMPA1963, RMPA1964, RMPA1965 Datasheet download

Five Points

Part Number: RMPA1963

Category: RF and RFID

MFG: Fairchild Semiconductor (VA)

Package Cooled: QFN-10

D/C: 05+

Description: IC MOD RF POWER AMP 8PIN 3X3LCC

Attentive hint

Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.

How to buy ?

How long will receive a response.

Top Sellers:

TOP

RMPA1963 General Description

The RMPA1963 Power Amplifier Module (PAM) is Fairchild's latest innovation in 50 Ohm matched, surface mount modules targeting US-PCS CDMA/WCDMA/HSDPA and Wireless Local Loop (WLL) applications. Answering the call for ultra-low DC power consumption and extended battery life in portable electronics, the RMPA1963 uses novel proprietary circuitry to dramatically reduce amplifier current at low to medium RF output power levels (< +16 dBm), where the handset most often operates.

A simple two-state Vmode control is all that is needed to reduce operating current by more than 50% at 16 dBm output power, and quiescent current (Iccq) by as much as 70% compared to traditional power-saving methods. No additional circuitry, such as DC-to-DC converters, are required to achieve this remarkable improvement in amplifier efficiency. Further, the 4x4x1.5 mm LCC package is pin-compatible and a drop-in replacement for last generation 4x4 mm PAMs widely used today, minimizing the design time to apply this performanceenhancing technology. The multi-stage GaAs Microwave Monolithic Integrated Circuit (MMIC) is manufactured using Fairchild RF's InGaP Heterojunction Bipolar Transistor (HBT) process.

RMPA1963 Maximum Ratings

Symbol	Parameter	Value	Units
V_CC1, V_CC2	Supply Voltages	5.0	V
V_ref	Reference Voltage	2.6 to 3.5	V
V_mode	Power Control Voltage	3.5	V
P_in	RF Input Power	+10	dBm
T_stg	Storage Temperature	-55 to +150

Note:
1. No permanent damage with one parameter set at extreme limit. Other parameters set to typical values.

RMPA1963 Features

` 38% CDMA/WCDMA efficiency at +28 dBm Pout
` 14% CDMA/WCDMA efficiency (85 mA total current) at +16 dBm Pout
` Meets HSDPA performance requirements
` Linear operation in low-power mode up to +19 dBm
` Low quiescent current (Iccq): 25 mA in low-power mode
` Single positive-supply operation with low power and shutdown modes
• 3.4V typical Vcc operation
• Low Vref (2.85V) compatible with advanced handset chipsets
` Compact Lead-free compliant LCC package (4.0 X 4.0 x 1.5 mm nominal)
` Industry standard pinout
` Internally matched to 50 Ohms and DC blocked RF input/output
` Meets IS-95/CDMA2000-1XRTT/WCDMA performance requirements

RMPA1965 Parameters

Technical/Catalog Information	RMPA1965
Vendor	Fairchild Semiconductor (VA)
Category	RF and RFID
Package / Case	8-LCC
Voltage - Supply	3V ~ 4.2V
Current - Supply	45mA
Gain	26dB
Frequency	1.85GHz ~ 1.91GHz
RF Type	CDMA, CDMA2000, W-CDMA, PCS, HSPDA
Packaging	Cut Tape (CT)
Noise Figure	4dB
P1db	-
Test Frequency	-
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	RMPA1965 RMPA1965 RMPA1965CT ND RMPA1965CTND RMPA1965CT

RMPA1965 General Description

The RMPA1965 power amplifier module (PAM) is designed for CDMA, CDMA2000-1X, WCDMA and HSDPA personal communications system (PCS) applications. The 2 stage PAM is internally matched to 50 to minimize the use of external components and features a low-power mode to reduce standby current and DC power consumption during peak phone usage.

High power-added efficiency and excellent linearity are achieved using our InGaP Heterojunction Bipolar Transistor (HBT) process.

RMPA1965 Maximum Ratings

Symbol	Parameter	Value	Units
V_CC1, V_CC2	Supply Voltages	5.0	V
V_ref	Reference Voltage	2.6 to 3.5	V
V_mode	Power Control Voltage	3.5	V
P_in	RF Input Power	+10	dBm
T_STG	Storage Temperature	-55 to +150

Note:
1: No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values.

RMPA1965 Features

` Single positive-supply operation with low power and shutdown modes
` 40% CDMA/WCDMA efficiency at +28 dBm average output power
` Compact lead-free compliant low-profile package (3.0 x 3.0 x 1.0 mm nominal)
` Internally matched to 50 and DC blocked RF input/output
` Meets CDMA2000-1XRTT/WCDMA performance requirements
` Meets HSDPA performance requirement

Hotspot Suppliers Product

Product List A B C D E F G H I J K L M N O P Q R S T U V W X Y Z 0 1 2 3 4 5 6 7 8 9

MT58L64L18CT-10

Price: 4-6 USD

MT58L64L18CT-10 TQFP100
DL-7140-211M

Price: 5-6.5 USD

DL-7140-211M laser tube
74LVC74APG

Price: 4-5 USD

74LVC74APG - IC FLIP FLOP D-Type POS-EDG DUAL 14TSSOP
CY28346ZI-2

Price: 6.5-8 USD

CYPRESS - Clock Synthesizer with Differential CPU Outputs
PI5V330QEX

Price: 0.284-0.286 USD

PI5V330QEX Pericom Multiplexer Switch ICs
BSM300GA120DN2

Price: 1-2 USD

IGBT power module, Single switch, 1200 V, Collector-emitter voltage, 430A
SVA150XG04TB

Price: 1-2 USD

a-Si TFT-LCD, NEC, 228.096Hmm, 560V
PC354N1

Price: 0.124-0.2 USD

PC354N1T - Mini-flat Package, AC Input Type Photocoupler - Sharp Electrionic Components
RL1210JR-070R22L

Price: 0.177-0.178 USD

RL1210JR51-XX-BL - Thick Film Chip Resistor Low Ohmic - TAITRON Components Incorporated
STPS140A

Price: 0.053-0.055 USD

STPS140A - POWER SCHOTTKY RECTIFIER - STMicroelectronics
STA013

Price: 1.45-1.5 USD

STA013 - MPEG 2.5 LAYER III AUDIO DECODER - STMicroelectronics
SMBJ5347B

Price: 0.073-0.075 USD

SMBJ5347B - 5 Watt Surface Mount Silicon Zener Diodes - Micro Commercial Components