RMPA0967

RF Amplifier CDMA2000-1X-WCDMA Pwr Edge Amp Mod

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RMPA0967 Picture
SeekIC No. : 00612920 Detail

RMPA0967: RF Amplifier CDMA2000-1X-WCDMA Pwr Edge Amp Mod

floor Price/Ceiling Price

Part Number:
RMPA0967
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/11/11

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Product Details

Quick Details

Type : Power Amplifier Operating Frequency : 849 MHz
Maximum Operating Temperature : + 85 C Mounting Style : SMD/SMT
Packaging : Reel    

Description

Noise Figure :
Bandwidth :
Output Intercept Point :
Operating Supply Voltage :
Supply Current :
Package / Case :
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 85 C
Packaging : Reel
Type : Power Amplifier
Operating Frequency : 849 MHz


Features:

· Single positive-supply operation with low power and shutdown modes
· 39% CDMA/WCDMA efficiency at +28 dBm average output power
· 52% AMPS mode efficiency at +31 dBm output power
· Compact lead-free compliant LCC package (3.0 X 3.0 x 1.0 mm)
· Internally matched to 50 Ohms and DC blocked RF input/output
· Meets CDMA2000-1XRTT/WCDMA performance requirements
· Meets HSDPA performance requirements
· Alternative pin-out to Fairchild RMPA0965



Specifications

Parameter Symbol Value Units
Supply Voltages Vcc1, Vcc2 5.0 V
Reference Voltage Vref 2.6 to 3.5 V
Power Control Voltage Vmode 3.5 V
RF Input Power Pin +10 dBm
Storage Temperature Tstg -55 to +150
Note:
1. No permanent damage with one parameter set at extreme limit. Other parameters set to typical values.



Description

The RMPA0967 power amplifier module (PAM) is designed for cellular band AMPS, CDMA, CDMA2000-1X, WCDMA and HSDPA applications. The 2 stage PAM is internally matched to 50 Ohms to minimize the use of external components and features a low-power mode to reduce standby current and DC power consumption during peak phone usage. High poweradded efficiency and excellent linearity are achieved using Fairchild RF's InGaP Heterojunction Bipolar Transistor (HBT) process.




Parameters:

Technical/Catalog InformationRMPA0967
VendorFairchild Semiconductor (VA)
CategoryRF and RFID
Package / Case8-LCC
Voltage - Supply3V ~ 4.2V
Current - Supply60mA
Gain28dB
Frequency824MHz ~ 849MHz
RF TypeCellular, CDMA, CDMA2000, AMPS, IS-95, HSDPA
PackagingDigi-Reel?
Noise Figure-
P1db-
Test Frequency-
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names RMPA0967
RMPA0967
RMPA0967DKR ND
RMPA0967DKRND
RMPA0967DKR



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