NDH8507, NDH8521, NDH8521C Selling Leads, Datasheet
MFG:169 Package Cooled:NS D/C:SOIC-8
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NDH8507, NDH8521, NDH8521C Datasheet download
Part Number: NDH8507
MFG: 169
Package Cooled: NS
D/C: SOIC-8
MFG:169 Package Cooled:NS D/C:SOIC-8
NDH8507, NDH8521, NDH8521C Datasheet download
MFG: 169
Package Cooled: NS
D/C: SOIC-8
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PDF/DataSheet Download
Datasheet: NDH8301N
File Size: 216852 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: NDH8521C
File Size: 104338 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: NDH8521C
File Size: 104338 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Symbol |
Parameter |
N-Channel |
P-Channel |
Units | |
VDSS VGSS |
Drain-Source Voltage Gate-Source Voltage - Continuous |
30 ±20 3.8 10.5 |
-30 ±20 -2.7 -8 |
V V A W °C | |
ID |
Drain Current Continuous Pulsed | (Note 1) | |||
PD |
Power Dissipation for Single Operation | (Note 1) |
0.8 -55 to 150 | ||
TJ,TSTG | Operating and Storage Junction Temperature Range |
RJA RJC |
Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case |
(Note 1) (Note 1) |
156 |
°C/W °C/W |