NDH8507, NDH8521, NDH8521C Selling Leads, Datasheet
MFG:169 Package Cooled:NS D/C:SOIC-8
NDH8507, NDH8521, NDH8521C Datasheet download
Part Number: NDH8507
MFG: 169
Package Cooled: NS
D/C: SOIC-8
NDH8507, NDH8521, NDH8521C
- Table of contents:
Info of NDH8507
Info of NDH8521
Info of NDH8521C
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About NDH8301N
PDF/DataSheet Download
Datasheet: NDH8301N
File Size: 216852 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About NDH8521C
PDF/DataSheet Download
Datasheet: NDH8521C
File Size: 104338 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About NDH8521C
PDF/DataSheet Download
Datasheet: NDH8521C
File Size: 104338 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
NDH8521C General Description
These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
NDH8521C Maximum Ratings
|
Symbol |
Parameter |
N-Channel |
P-Channel |
Units | |
|
VDSS VGSS |
Drain-Source Voltage Gate-Source Voltage - Continuous |
30 ±20 3.8 10.5 |
-30 ±20 -2.7 -8 |
V V A W °C | |
|
ID |
Drain Current Continuous Pulsed | (Note 1) | |||
|
PD |
Power Dissipation for Single Operation | (Note 1) |
0.8 -55 to 150 | ||
| TJ,TSTG | Operating and Storage Junction Temperature Range | ||||
| RJA RJC |
Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case |
(Note 1) (Note 1) |
156 |
°C/W °C/W |
NDH8521C Features
`N-Ch 3.8 A, 30V, RDS(ON)=0.033 @ VGS= 10 V RDS(ON)=0.005 @ VGS=2.7 V P-Ch -2.7 A, -30V, RDS(ON)=0.07 @ VGS= -10 V RDS(ON) =0.015 @ VGS= -4.5 V.
`Proprietary SuperSOTTM-8 package design using copper lead frame for superior thermal and electrical capabilities.
`High density cell design for extremely low RDS(ON).
`Exceptional on-resistance and maximum DC current capability.
`Proprietary SuperSOTTM-8 package design using copper lead frame for superior thermal and electrical capabilities.
`High density cell design for extremely low RDS(ON).
`Exceptional on-resistance and maximum DC current capability.
NDH8521C Connection Diagram
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