NDH831N

Resistance Drain-Source RDS (on) :
Packaging :
Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : 8 V
Continuous Drain Current : 5.8 A
Configuration : Single Quint Drain Dual Source
Package / Case : SuperSOT-8


Features:

`5.8A, 20V. R<sub>DS(ON)</sub> = 0.03  @ V<sub>GS</sub> = 4.5V R<sub>DS(ON)</sub> = 0.04  @ V<sub>GS</sub> = 2.7V.
`High density cell design for extremely low RDS(ON).
`Enhanced SuperSOTTM-8 small outline surface mount
`package with high power and current handling capability.


Pinout




Specifications

Symbol	Parameter		NDH831N	Units
VDSS VGSS	Drain-Source Voltage Gate-Source Voltage		20 8 5.8 20 1.8 1 0.9 -55 to 150	V V A W °C
ID	Drain Current Continuous Pulsed	(Note 1a)
PD	Maximum Power Dissipation	(Note 1a) (Note 1b) (Note 1c)
TJ,TSTG	Operating and Storage Temperature Range

THERMAL CHARACTERISTICS
<td width="5

RJA RJC

Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case

(Note 1a) (Note 1)

70 20

Description

These N-Channel enhancement mode power field effect transistors NDH831N are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. NDH831N is particularly suited for low voltage applications such as notebook computer power management and portable electronics where fast switching, low in-line power loss, and resistance to transients are needed.