NDH8303N

Resistance Drain-Source RDS (on) :
Packaging :
Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 8 V
Configuration : Dual Dual Drain
Continuous Drain Current : 3.8 A
Package / Case : SuperSOT-8


Features:

`3.8 A, 20 V. R<sub>DS(ON)</sub> = 0.035  @ V<sub>GS</sub> = 4.5 V R<sub>DS(ON)</sub> = 0.045  @ V<sub>GS</sub> = 2.7 V.
`Proprietary SuperSOTTM-8 package design using copper lead frame for superior thermal and electrical capabilities.
`High density cell design for extremely low R<sub>DS(ON).</sub>
`Exceptional on-resistance and maximum DC current capability.


Pinout




Specifications

Symbol	Parameter		NDH8303N	Units
VDSS VGSS	Drain-Source Voltage Gate-Source Voltage - Continuous		20 ±8 3.8 15 0.8 -55 to 150	V V A W °C
ID	Drain Current Continuous Pulsed	(Note 1)
PD	Maximum Power Dissipation	(Note 1 )
TJ,TSTG	Operating and Storage Temperature Range

THERMAL CHARACTERISTICS

RJA RJC

Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case

(Note 1a) (Note 1)

156 40

°C/W °C/W

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Description

SuperSOT^TM-8 N-Channel enhancement mode power field effect transistors NDH8303N are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. NDH8303N is particularly suited for low voltage applications such as notebook computer power management, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.