NDH8304P

MOSFET Dual P-Ch FET Enhancement Mode

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SeekIC No. : 00163352 Detail

NDH8304P: MOSFET Dual P-Ch FET Enhancement Mode

floor Price/Ceiling Price

Part Number:
NDH8304P
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 20 V
Gate-Source Breakdown Voltage : +/- 8 V Continuous Drain Current : 2.7 A
Resistance Drain-Source RDS (on) : 0.061 Ohms Configuration : Dual Dual Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SSOT-8 Packaging : Reel    

Description

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : - 20 V
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 8 V
Configuration : Dual Dual Drain
Continuous Drain Current : 2.7 A
Resistance Drain-Source RDS (on) : 0.061 Ohms
Package / Case : SSOT-8


Features:

· -2.7 A, -20 V. RDS(ON) = 0.07 W @ VGS = -4.5 V RDS(ON) = 0.095 W @ VGS = -2.7 V.
· Proprietary SuperSOTTM-8 package design using copper lead frame for superior thermal and electrical capabilities.
· High density cell design for extremely low RDS(ON).
· Exceptional on-resistance and maximum DC current capability.



Pinout

  Connection Diagram


Specifications

Symbol
Parameter
NDH8304P
Units
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage - Continuous
-20
±8
-2.7
-10
0.8
-55 to 150
V
V
A
W

°C
ID
Drain Current Continuous Pulsed (Note 1)
PD
Maximum Power Dissipation (Note 1 )
TJ,TSTG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
RJA
RJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1)
(Note 1)

156
40

°C/W
°C/W



Description

SuperSOTTM-8 P-Channel enhancement mode power field effect transistors NDH8304P are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. NDH8304P is particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast high-side switching, and low in-line power loss are needed in a very small outline surface mount package.




Parameters:

Technical/Catalog InformationNDH8304P
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 P-Channel (Dual)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C2.7A
Rds On (Max) @ Id, Vgs70 mOhm @ 2.7A, 4.5V
Input Capacitance (Ciss) @ Vds 865pF @ 10V
Power - Max800mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs23nC @ 4.5V
Package / CaseSuperSOT-8
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NDH8304P
NDH8304P



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