NDH8504N, NDH8504P, NDH8505 Selling Leads, Datasheet
MFG:FSC Package Cooled:VSOP8 D/C:9917+
NDH8504N, NDH8504P, NDH8505 Datasheet download
Part Number: NDH8504N
MFG: FSC
Package Cooled: VSOP8
D/C: 9917+
NDH8504N, NDH8504P, NDH8505
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Info of NDH8504N
Info of NDH8504P
Info of NDH8505
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About NDH8301N
PDF/DataSheet Download
Datasheet: NDH8301N
File Size: 216852 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About NDH8504P
PDF/DataSheet Download
Datasheet: NDH8504P
File Size: 215836 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About NDH8301N
PDF/DataSheet Download
Datasheet: NDH8301N
File Size: 216852 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
NDH8504P General Description
SuperSOTTM-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
NDH8504P Maximum Ratings
|
Symbol |
Parameter |
NDH8504P |
Units | |
|
VDSS VGSS |
Drain-Source Voltage Gate-Source Voltage - Continuous |
-30 ±20 -2.7 -8 0.8 -55 to 150 |
V V A W °C | |
|
ID |
Drain Current Continuous Pulsed | (Note 1) | ||
|
PD |
Maximum Power Dissipation | (Note 1 ) | ||
| TJ,TSTG | Operating and Storage Temperature Range | |||
| RJA RJC |
Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case |
(Note 1) (Note 1) |
156 |
°C/W °C/W |
NDH8504P Features
`-2.7 A, -30 V. RDS(ON) = 0.07 @ VGS = -10 V RDS(ON) = 0.115 @ VGS = -4.5 V.
`Proprietary SuperSOTTM-8 package design using copper lead frame for superior thermal and electrical capabilities.
`High density cell design for extremely low RDS(ON).
`Exceptional on-resistance and maximum DC current capability.
`Proprietary SuperSOTTM-8 package design using copper lead frame for superior thermal and electrical capabilities.
`High density cell design for extremely low RDS(ON).
`Exceptional on-resistance and maximum DC current capability.
NDH8504P Connection Diagram
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