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NDH8501N, NDH8502P, NDH8520C

NDH8501N, NDH8502P, NDH8520C Selling Leads, Datasheet

MFG:NS  Package Cooled:SOP8  D/C:09+

NDH8501N, NDH8502P, NDH8520C Picture

NDH8501N, NDH8502P, NDH8520C Datasheet download

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Part Number: NDH8501N

 

MFG: NS

Package Cooled: SOP8

D/C: 09+

 

 

 
 
 
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About NDH8301N

PDF/DataSheet Download

Datasheet: NDH8301N

File Size: 216852 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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About NDH8502P

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Datasheet: NDH8502P

File Size: 74107 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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About NDH8520C

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Datasheet: NDH8520C

File Size: 234316 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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NDH8502P General Description

SuperSOTTM-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast high-side switching, and low in-line power loss are needed in a very small outline surface mount package.

NDH8502P Maximum Ratings

Symbol
Parameter
NDH8502P
Units
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage - Continuous
-30
±20
-2.2
-10
0.8
-55 to 150
V
V
A
W

°C
ID
Drain Current Continuous Pulsed (Note 1)
PD
Maximum Power Dissipation (Note 1 )
TJ,TSTG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
</table
RJA
RJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1)
(Note 1)

156
40

°C/W
°C/W

NDH8502P Features

` -2.2 A, -30 V. RDS(ON) = 0.11 @ VGS = -10 V RDS(ON) = 0.18 @ VGS = -4.5 V.
` Proprietary SuperSOTTM-8 package design using copper lead frame for superior thermal and electrical capabilities.
` High density cell design for extremely low RDS(ON).
` Exceptional on-resistance and maximum DC current capability.

NDH8502P Connection Diagram

NDH8520C General Description

These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

NDH8520C Maximum Ratings

Symbol
Parameter

N-Channel

P-Channel

Units
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage - Continuous
30
±20
2.8
10
-30
±20
-2.2
-10
V
V
A

W

°C
ID
Drain Current Continuous Pulsed (Note 1)
PD
Power Dissipation for Single Operation (Note 1)
0.8
-55 to 150
TJ,TSTG Operating and Storage Junction Temperature Range
THERMAL CHARACTERISTICS
<
RJA
RJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1)
(Note 1)

156
40

°C/W
°C/W

NDH8520C Features

`N-Ch 3.8 A, 20 V, RDS(ON)=0.035 @ VGS= 4.5 V RDS(ON)=0.045 W @ VGS=2.7 V P-Ch -2.7 A, -20V, RDS(ON)=0.07 @ VGS= -4.5 V RDS(ON) =0.095 @ VGS= -2.7 V.
`Proprietary SuperSOTTM-8 package design using copper lead frame for superior thermal and electrical capabilities.
`High density cell design for extremely low RDS(ON).
`Exceptional on-resistance and maximum DC current capability.

NDH8520C Connection Diagram

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