MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:n/a D/C:98+
NDH8304P, NDH831N, NDH8320C Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: n/a
D/C: 98+
Description: MOSFET P-CH DUAL 20V 2.7A SSOT8
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Datasheet: NDH8304P
File Size: 72703 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: NDH831N
File Size: 227209 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: NDH8320C
File Size: 75946 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
| Technical/Catalog Information | NDH8304P |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | 2 P-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 2.7A |
| Rds On (Max) @ Id, Vgs | 70 mOhm @ 2.7A, 4.5V |
| Input Capacitance (Ciss) @ Vds | 865pF @ 10V |
| Power - Max | 800mW |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 23nC @ 4.5V |
| Package / Case | SuperSOT-8 |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | NDH8304P NDH8304P |
SuperSOTTM-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
|
Symbol |
Parameter |
NDH8304P |
Units | |
|
VDSS VGSS |
Drain-Source Voltage Gate-Source Voltage - Continuous |
-20 ±8 -2.7 -10 0.8 -55 to 150 |
V V A W °C | |
|
ID |
Drain Current Continuous Pulsed | (Note 1) | ||
|
PD |
Maximum Power Dissipation | (Note 1 ) | ||
| TJ,TSTG | Operating and Storage Temperature Range | |||
| RJA RJC |
Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case |
(Note 1) (Note 1) |
156 |
°C/W °C/W |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and portable electronics where fast switching, low in-line power loss, and resistance to transients are needed.
|
Symbol |
Parameter |
NDH831N |
Units | |
|
VDSS VGSS |
Drain-Source Voltage Gate-Source Voltage |
20 8 5.8 20 1.8 1 0.9 -55 to 150 |
V V A W °C | |
|
ID |
Drain Current Continuous Pulsed | (Note 1a) | ||
|
PD |
Maximum Power Dissipation | (Note 1a) (Note 1b) (Note 1c) | ||
| TJ,TSTG | Operating and Storage Temperature Range | |||
| RJA RJC |
Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case |
(Note 1a) (Note 1) |
70 | <td width="5
These dual N- and P -Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
|
Symbol |
Parameter |
N-Channel |
P-Channel |
Units | |
|
VDSS VGSS |
Drain-Source Voltage Gate-Source Voltage - Continuous |
20 8 3 15 |
-20 -8 -2 -10 |
V V A W °C | |
|
ID |
Drain Current Continuous Pulsed | (Note 1) | |||
|
PD |
Power Dissipation for Single Operation | (Note 1) |
0.8 -55 to 150 | ||
| TJ,TSTG | Operating and Storage Junction Temperature Range | ||||
| RJA RJC |
Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case |
(Note 1) (Note 1) |
156 |
°C/W °C/W |
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