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MTY50N50, MTY55N20E, MTZ J T-72 27B

Table of contents:
Info of MTY50N50
Info of MTY55N20E
Info of MTZ J T-72 27B

MTY50N50, MTY55N20E, MTZ J T-72 27B Selling Leads, Datasheet

MFG:MOT Package Cooled:MOTOROLA D/C:09+ ROHS

MTY50N50, MTY55N20E, MTZ J T-72 27B Picture

MTY50N50, MTY55N20E, MTZ J T-72 27B Datasheet download

Five Points

Part Number: MTY50N50

MFG: MOT

Package Cooled: MOTOROLA

D/C: 09+ ROHS

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MTY50N50 Suppliers

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MTY100N10
Pack: TO Qty: 139 Adddate: 2024-11-27
SOLAR SYSTEMS(HONGKONG) ELECTRONICS COMPANY
Contact: Mr.solarlin
Tel: 0086-0755-61685878
Fax: 0086-0755-82539977
(0)

MTY25N60E
Vendor: ON Pack: TO D/C: 08+& Qty: 5000 Note: NEW&ORIGINAL Adddate: 2024-11-27
Jie Teng Xin International co.,ltd
Contact: Ms.Betty
Tel: 0086-0755-82568832
Fax: 0086-0755-82539513
(110)

MTY30M50E
Pack: TO Qty: 4563 Adddate: 2024-11-27
HONGKONG HUAXINDA ELECTRONIC CO.,LTD
Contact: Ms.lucyli
Tel: 86+-755-13510754664
Fax: 86+-755-13510754664
(438)

MTY30N50E
Vendor: ON Pack: TO D/C: 08+& Qty: 500 Note: hot offer,special price Adddate: 2024-11-27
Easywin electronics enterprise Ltd.
Contact: Mr.Leonlu
Tel: 0086-0755-82544219
Fax: 0086-0755-82544202
(0)

About MTY100N10E

PDF/DataSheet Download

Datasheet: MTY100N10E

File Size: 221821 KB

Manufacturer: MOTOROLA [Motorola, Inc]

Download : Click here to Download

Related PDF Download

MTY100N10E/D
File Size: 190387 KB
MTY10N100E
File Size: 234143 KB
MTY10N100E/D
File Size: 234143 KB
MTY14N100
File Size: 238355 KB
MTY14N100E
File Size: 238355 KB

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MTY100N20E T - TO - 08+
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MTY16N80E ON - 1000 - TO
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MTY25N100E 600 - TO - 08+
MTY30N50 - TO-3P - .
MTY50N50 MOT - MOTOROLA - 09+ ROHS
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NX8564LE878-BC NEC - N/A - 09+
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MTY100N10E - -
MTY10N100EMOTOROLA - TO -
MTY14N100MOTOROLA - TO -
MTY16N80EMOT - TO-3PL - 04+
MTY20N50D - -
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MTY55N20E Suppliers

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MTY100N10
Pack: TO Qty: 139 Adddate: 2024-11-27
SOLAR SYSTEMS(HONGKONG) ELECTRONICS COMPANY
Contact: Mr.solarlin
Tel: 0086-0755-61685878
Fax: 0086-0755-82539977
(0)

MTY25N60E
Vendor: ON Pack: TO D/C: 08+& Qty: 5000 Note: NEW&ORIGINAL Adddate: 2024-11-27
Jie Teng Xin International co.,ltd
Contact: Ms.Betty
Tel: 0086-0755-82568832
Fax: 0086-0755-82539513
(110)

MTY30M50E
Pack: TO Qty: 4563 Adddate: 2024-11-27
HONGKONG HUAXINDA ELECTRONIC CO.,LTD
Contact: Ms.lucyli
Tel: 86+-755-13510754664
Fax: 86+-755-13510754664
(438)

MTY30N50E
Vendor: ON Pack: TO D/C: 08+& Qty: 500 Note: hot offer,special price Adddate: 2024-11-27
Easywin electronics enterprise Ltd.
Contact: Mr.Leonlu
Tel: 0086-0755-82544219
Fax: 0086-0755-82544202
(0)

About MTY55N20E

PDF/DataSheet Download

Datasheet: MTY55N20E

File Size: 236970 KB

Manufacturer: MOTOROLA [Motorola, Inc]

Download : Click here to Download

Related PDF Download

MTY100N10E
File Size: 221821 KB
MTY100N10E/D
File Size: 190387 KB
MTY10N100E
File Size: 234143 KB
MTY10N100E/D
File Size: 234143 KB
MTY14N100
File Size: 238355 KB

Related Part Number

MTY100N20E T - TO - 08+
MTY10N100E/D T - TO - 4
MTY140N100E ON - 03+/04+ - TO3PL
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MTY16N80E ON - 1000 - TO
MTY20N50E ON - 05+/06+ - TO3PL
MTY25N100E 600 - TO - 08+
MTY30N50 - TO-3P - .
MTY50N50 MOT - MOTOROLA - 09+ ROHS
MTY55N20 - TO-3P - .
HDL4M2RBQD090-00 HITACHI - BGA - 08+/09+
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ADG704BRM(S9B) Analog Devices Inc - SSOP-10P - 03+
MTY100N10E - -
MTY10N100EMOTOROLA - TO -
MTY14N100MOTOROLA - TO -
MTY16N80EMOT - TO-3PL - 04+
MTY20N50D - -
HMBTA92
HD145858
HD14014B
HMBT6520
HMBT8599
HMBD4148
HMBT1815
HMBT3904
LTC2255/LTC2254
HMBT2484

MTY55N20E General Description

This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a draintosource diode with fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters, PWM motor controls, and other inductive loads. The avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.

MTY55N20E Maximum Ratings

Rating	Symbol	Value	Unit
DraintoSource Voltage	V_DSS	200	Vdc
DraintoGate Voltage (R_GS = 1.0 M)	V_DGR	200	Vdc
GatetoSource Voltage - Continuous - NonRepetitive(t_p 10 ms)	V_GS V_GSM	± 20 ± 40	Vdc Vpk
Drain Current - Continuous @ T_c = 25°C - Single Pulse (t_p 10 s)	I_D I_DM	55 165	Adc Apk
Total Power Dissipation Derate above 25°C	P_D	300 2.38	Watts W/°C
Operating and Storage Temperature Range	T_J, T_stg	55 to 150	°C
Single Pulse DraintoSource Avalanche Energy T_J = 25°C (V_DD =80Vdc,V_GS = 10Vdc, Vdc,Peak I_L =110 Apk, L =0.3mH, R_G = 25)	E_AS	3000	mJ
Thermal Resistance - Junction to Case - Junction to Ambient	R_JC R_JA	0.42 40	°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds	T_L	260	°C

Designer's Data for "Worst Case" Conditions - The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves - representing boundaries on device characteristics - are given to facilitate "worst case" design.
EFET and Designer's are trademarks of Motorola, Inc.
TMOS is a registered trademark of Motorola, Inc.

MTY55N20E Features

• Avalanche Energy Specified
• Diode is Characterized for Use in Bridge Circuits
• I_DSS and V_DS(on) Specified at Elevated Temperature

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