Position: Home  > All Categories> Integrated Circuits (ICs) > MTY10N100E

MTY10N100E

Features: • Robust High Voltage Termination• Avalanche Energy Specified• Diode is Characterized for Use in Bridge Circuits• IDSS and VDS(on) Specified at Elevated TemperatureSpecifications Rating Symbol Value Unit DraintoSource Voltage VDSS 100 V...

product image

MTY10N100E Picture
See larger image
SeekIC No. : 004431016 Detail

MTY10N100E: Features: • Robust High Voltage Termination• Avalanche Energy Specified• Diode is Characterized for Use in Bridge Circuits• IDSS and VDS(on) Specified at Elevated Temperature...

MTY10N100E Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
MTY10N100E
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/26

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• Robust High Voltage Termination
• Avalanche Energy Specified
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature


Specifications

Rating
Symbol
Value
Unit
DraintoSource Voltage
VDSS
100
Vdc
DraintoGate Voltage (RGS = 1.0 M)
VDGR
100
Vdc
GatetoSource Voltage - Continuous
- NonRepetitive (tp 10 ms)
VGS
VGSM
± 20
± 40
Vdc
Vpk
Drain Current - Continuous @ Tc = 25°C
- Single Pulse (tp 10 s)
ID
IDM
10
30
Amps
Total Power Dissipation
Derate above 25°C
PD
250
2.0
Watts
W/°C
Operating and Storage Temperature Range
TJ, Tstg
55 to 150
°C
Single Pulse DraintoSource Avalanche Energy TJ = 25°C
(VDD =100Vdc,VGS = 10Vdc, Vdc,Peak IL =10 Apk, L =10 mH, RG = 25)
EAS
500
mJ
Thermal Resistance
- Junction to Case
- Junction to Ambient
RJC
RJA
0.5
30
°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds
TL
260
°C
Designer's Data for "Worst Case" Conditions - The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves - representing boundaries on device characteristics - are given to facilitate "worst case" design.
EFET and Designer's are trademarks of Motorola, Inc.
TMOS is a registered trademark of Motorola, Inc.


Description

This MTY10N100E uses an advanced termination scheme to provide enhanced voltageblocking capability without degrading performance over time. In addition, this advanced TMOS EFET is designed to withstand high energy in the avalanche and commutation modes. Designed for high voltage and high speed switching applications in power supplies, converters and PWM motor controls, these MTY10N100E are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Inductors, Coils, Chokes
DR127-330-R
SD53-100-R
Audio Products
HUC1002
WM-64CT
Line Protection, Backups
BX0023
A20B-1008-0550
Soldering, Desoldering, Rework Products
TGK-900M-B
TGK-900M-1.6D
Resistors
A101G
3006P-1-205LF
Connectors, Interconnects
ASP-134488-01
WM4078-ND
View more