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MTY16N80E

Features: • Robust High Voltage Termination• Avalanche Energy Specified• Diode is Characterized for Use in Bridge Circuits• IDSS and VDS(on) Specified at Elevated TemperatureSpecifications Rating Symbol Value Unit DraintoSource Voltage VDSS 800 V...

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MTY16N80E: Features: • Robust High Voltage Termination• Avalanche Energy Specified• Diode is Characterized for Use in Bridge Circuits• IDSS and VDS(on) Specified at Elevated Temperature...

MTY16N80E Data Sheet

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Part Number:
MTY16N80E
Supply Ability:
5000

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  • 1~5000
  • Unit Price
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

• Robust High Voltage Termination
• Avalanche Energy Specified
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature


Specifications

Rating
Symbol
Value
Unit
DraintoSource Voltage
VDSS
800
Vdc
DraintoGate Voltage (RGS = 1.0 M)
VDGR
800
Vdc
GatetoSource Voltage - Continuous
- NonRepetitive(tp 10 ms)
VGS
VGSM
± 20
± 40
Vdc
Vpk
Drain Current
- Continuous
- Continuous @ Tc = 100°C
- Single Pulse (tp 10 s)
ID
ID
IDM
16
11
55
Adc

Apk
Total Power Dissipation
Derate above 25°C
PD
300
2.4
Watts
W/°C
Operating and Storage Temperature Range
TJ, Tstg
55 to 150
°C
Single Pulse DraintoSource Avalanche Energy TJ = 25°C
(VDD =100Vdc,VGS = 10Vdc, Vdc,Peak IL =16 Apk, L =10 mH, RG = 25)
EAS
1280
mJ
Thermal Resistance
- Junction to Case
- Junction to Ambient
RJC
RJA
0.42
30
°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds
TL
260
°C
Designer's Data for "Worst Case" Conditions - The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves - representing boundaries on device characteristics - are given to facilitate "worst case" design.
EFET and Designer's are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.


Description

This MTY16N80E uses an advanced termination scheme to provide enhanced voltageblocking capability without degrading performance over time. In addition, this advanced TMOS EFET is designed to withstand high energy in the avalanche and commutation modes. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these MTY16N80E are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.




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