Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Vgs(th) (Max) @ Id: 4V @ 250µA
Current - Continuous Drain (Id) @ 25° C: 100A
Packaging: Tube
Mounting Type: Through Hole
Power - Max: 300W
Gate Charge (Qg) @ Vgs: 378nC @ 10V
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: TO-264
Manufacturer: ON Semiconductor
Rds On (Max) @ Id, Vgs: 11 mOhm @ 50A, 10V
Input Capacitance (Ciss) @ Vds: 10640pF @ 25V
Features: • Avalanche Energy Specified
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated TemperatureSpecifications
|
Rating |
Symbol |
Value |
Unit |
| DraintoSource Voltage |
VDSS |
100 |
Vdc |
| DraintoGate Voltage (RGS = 1.0 M) |
VDGR |
100 |
Vdc |
GatetoSource Voltage - Continuous
- NonRepetitive (tp 10 ms) |
VGS
VGSM |
± 20
± 40 |
Vdc
Vpk |
Drain Current - Continuous @ Tc = 25°C
- Single Pulse (tp 10 s) |
ID
IDM |
100
300 |
Adc
Apk |
Total Power Dissipation
Derate above 25°C |
PD |
300
2.38 |
Watts
W/°C |
| Operating and Storage Temperature Range |
TJ, Tstg |
55 to 150 |
°C |
Single Pulse DraintoSource Avalanche Energy TJ = 25°C
(VDD =80Vdc,VGS = 10Vdc, Vdc,Peak IL =100 Apk, L =0.1 mH, RG = 25) |
EAS
|
500 |
mJ |
Thermal Resistance
- Junction to Case
- Junction to Ambient |
RJC
RJA |
0.42
40 |
°C/W
|
| Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds |
TL |
260 |
°C |
Designer's Data for "Worst Case" Conditions - The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves - representing boundaries on device characteristics - are given to facilitate "worst case" design.
EFET and Designer's are trademarks of Motorola, Inc.
TMOS is a registered trademark of Motorola, Inc.DescriptionThis MTY100N10E is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a draintosource diode with fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters, PWM motor controls, and other inductive loads. The avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
Parameters: | Technical/Catalog Information | MTY100N10E |
| Vendor | ON Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 100A |
| Rds On (Max) @ Id, Vgs | 11 mOhm @ 50A, 10V |
| Input Capacitance (Ciss) @ Vds | 10640pF @ 25V |
| Power - Max | 300W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 378nC @ 10V |
| Package / Case | TO-264-3, TO-3BPL |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | MTY100N10E
MTY100N10E
MTY100N10EOS ND
MTY100N10EOSND
MTY100N10EOS
|
MTY100N10E Data Sheet
