MTY16N80E, MTY22N60E, MTY25N60E Selling Leads, Datasheet
MFG:ON Package Cooled:1000 D/C:TO
MTY16N80E, MTY22N60E, MTY25N60E Datasheet download
Part Number: MTY16N80E
MFG: ON
Package Cooled: 1000
D/C: TO
MTY16N80E, MTY22N60E, MTY25N60E
- Table of contents:
Info of MTY16N80E
Info of MTY22N60E
Info of MTY25N60E
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About MTY16N80E
PDF/DataSheet Download
Datasheet: MTY16N80E
File Size: 245228 KB
Manufacturer: MOTOROLA [Motorola, Inc]
Download : Click here to Download
About MTY100N10E
PDF/DataSheet Download
Datasheet: MTY100N10E
File Size: 221821 KB
Manufacturer: MOTOROLA [Motorola, Inc]
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About MTY25N60E
PDF/DataSheet Download
Datasheet: MTY25N60E
File Size: 242680 KB
Manufacturer: MOTOROLA [Motorola, Inc]
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MTY16N80E General Description
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltageblocking capability without degrading performance over time. In addition, this advanced TMOS EFET is designed to withstand high energy in the avalanche and commutation modes. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
MTY16N80E Maximum Ratings
|
Rating |
Symbol |
Value |
Unit |
| DraintoSource Voltage |
VDSS |
800 |
Vdc |
| DraintoGate Voltage (RGS = 1.0 M) |
VDGR |
800 |
Vdc |
| GatetoSource Voltage - Continuous - NonRepetitive(tp 10 ms) |
VGS VGSM |
± 20 ± 40 |
Vdc Vpk |
| Drain Current - Continuous - Continuous @ Tc = 100°C - Single Pulse (tp 10 s) |
ID ID IDM |
16 11 55 |
Adc Apk |
| Total Power Dissipation Derate above 25°C |
PD |
300 2.4 |
Watts W/°C |
| Operating and Storage Temperature Range |
TJ, Tstg |
55 to 150 |
°C |
| Single Pulse DraintoSource Avalanche Energy TJ = 25°C (VDD =100Vdc,VGS = 10Vdc, Vdc,Peak IL =16 Apk, L =10 mH, RG = 25) |
EAS |
1280 |
mJ |
| Thermal Resistance - Junction to Case - Junction to Ambient |
RJC RJA |
0.42 30 |
°C/W |
| Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds |
TL |
260 |
°C |
curves - representing boundaries on device characteristics - are given to facilitate "worst case" design.
EFET and Designer's are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
MTY16N80E Features
• Robust High Voltage Termination
• Avalanche Energy Specified
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
• Avalanche Energy Specified
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
MTY25N60E General Description
This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a draintosource diode with fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters, PWM motor controls, and other inductive loads. The avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
MTY25N60E Maximum Ratings
|
Rating |
Symbol |
Value |
Unit |
| DraintoSource Voltage |
VDSS |
600 |
Vdc |
| DraintoGate Voltage (RGS = 1.0 M) |
VDGR |
600 |
Vdc |
| GatetoSource Voltage - Continuous - NonRepetitive(tp 10 ms) |
VGS VGSM |
± 20 ± 40 |
Vdc Vpk |
| Drain Current - Continuous - Continuous @ Tc = 25°C - Single Pulse (tp 10 s) |
ID IDM |
25 65 |
Adc Apk |
| Total Power Dissipation Derate above 25°C |
PD |
300 2.38 |
Watts W/°C |
| Operating and Storage Temperature Range |
TJ, Tstg |
55 to 150 |
°C |
| Single Pulse DraintoSource Avalanche Energy TJ = 25°C (VDD =100Vdc,VGS = 10Vdc, Vdc,Peak IL =25 Apk, L =10 mH, RG = 25) |
EAS |
3000 |
mJ |
| Thermal Resistance - Junction to Case - Junction to Ambient |
RJC RJA |
0.42 40 |
°C/W |
| Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds |
TL |
260 |
°C |
curves - representing boundaries on device characteristics - are given to facilitate "worst case" design.
EFET and Designer's are trademarks of Motorola, Inc.
TMOS is a registered trademark of Motorola, Inc.
MTY25N60E Features
• Avalanche Energy Specified
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
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