Features: • Robust High Voltage Termination• Avalanche Energy Specified• Diode is Characterized for Use in Bridge Circuits• IDSS and VDS(on) Specified at Elevated TemperatureSpecifications Rating Symbol Value Unit DraintoSource Voltage VDSS 500 Vdc DraintoG...
MTY20N50D: Features: • Robust High Voltage Termination• Avalanche Energy Specified• Diode is Characterized for Use in Bridge Circuits• IDSS and VDS(on) Specified at Elevated Temperature...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Rating | Symbol | Value | Unit |
DraintoSource Voltage | VDSS | 500 | Vdc |
DraintoGate Voltage (RGS = 1.0 MW) | VDGR | 500 | Vdc |
GatetoSource Voltage - Continuous |
VGS VGSM |
± 20 ± 40 |
Vdc Vpk |
Drain Current - Continuous Drain Current - Continuous @ 100°C Drain Current - Single Pulse (tp 10 s) |
ID ID IDM |
20 13.9 60 |
Adc Apk |
Total Power Dissipation Derate above 25°C |
PD |
250 2.0 |
Watts |
Single Pulse DraintoSource Avalanche Energy - Starting TJ = 25°C (VDD = 30 Vdc, VGS = 5.0 Vdc, Peak IL = 9.0 Apk, L = 5.0 mH, RG = 25) |
EAS | 2000 | mJ |
Thermal Resistance - Junction to Case Thermal Resistance - Junction to Ambient |
RqJC RqJA |
0.50 40 |
°C/W |
Maximum Lead Temperature for Soldering Purposes, 1/8, from case for 10 seconds | TL | 260 | °C |
Operating and Storage Temperature Range | TJ, Tstg | 55 to 150 | °C |
This MTY20N50D uses an advanced termination scheme to provide enhanced voltageblocking capability without degrading performance over time. In addition, this advanced TMOS EFET is designed to withstand high energy in the avalanche and commutation modes. Designed for high voltage, high speed\ switching applications in power supplies, converters and PWM motor controls, these MTY20N50D are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.