MTY20N50E, MTY20N50E/D, MTY25N Selling Leads, Datasheet
MFG:ON Package Cooled:05+/06+ D/C:TO3PL
MTY20N50E, MTY20N50E/D, MTY25N Datasheet download
Part Number: MTY20N50E
MFG: ON
Package Cooled: 05+/06+
D/C: TO3PL
MTY20N50E, MTY20N50E/D, MTY25N
- Table of contents:
Info of MTY20N50E
Info of MTY20N50E/D
Info of MTY25N
Attentive hint
Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.
Top Sellers:
TOP
About MTY20N50E
PDF/DataSheet Download
Datasheet: MTY20N50E
File Size: 85822 KB
Manufacturer: ON SEMICONDUCTOR
Download : Click here to Download
About MTY20N50E/D
PDF/DataSheet Download
Datasheet: MTY20N50E/D
File Size: 188224 KB
Manufacturer:
Download : Click here to Download
About MTY25N60E
PDF/DataSheet Download
Datasheet: MTY25N60E
File Size: 242680 KB
Manufacturer: MOTOROLA [Motorola, Inc]
Download : Click here to Download
MTY20N50E General Description
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltageblocking capability without degrading performance over time. In addition, this advanced TMOS EFET is designed to withstand high energy in the avalanche and commutation modes. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
MTY20N50E Maximum Ratings
| Rating | Symbol | Value | Unit |
| DraintoSource Voltage | VDSS | 500 | Vdc |
| DraintoGate Voltage (RGS = 1.0 MW) | VDGR | 500 | Vdc |
| GatetoSource Voltage - Continuous |
VGS VGSM |
± 20 ± 40 |
Vdc Vpk |
| Drain Current - Continuous Drain Current - Continuous @ 100°C Drain Current - Single Pulse (tp 10 s) |
ID ID IDM |
20 13.9 60 |
Adc Apk |
| Total Power Dissipation Derate above 25°C |
PD |
250 2.0 |
Watts |
| Single Pulse DraintoSource Avalanche Energy - Starting TJ = 25°C (VDD = 30 Vdc, VGS = 5.0 Vdc, Peak IL = 9.0 Apk, L = 5.0 mH, RG = 25) |
EAS | 2000 | mJ |
| Thermal Resistance - Junction to Case Thermal Resistance - Junction to Ambient |
RqJC RqJA |
0.50 40 |
°C/W |
| Maximum Lead Temperature for Soldering Purposes, 1/8, from case for 10 seconds | TL | 260 | °C |
| Operating and Storage Temperature Range | TJ, Tstg | 55 to 150 | °C |
MTY20N50E Features
• Robust High Voltage Termination
• Avalanche Energy Specified
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
• Avalanche Energy Specified
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
MT58L64L18CT-10
Price: 4-6 USD
MT58L64L18CT-10 TQFP100
DL-7140-211M
Price: 5-6.5 USD
DL-7140-211M laser tube
74LVC74APG
Price: 4-5 USD
74LVC74APG - IC FLIP FLOP D-Type POS-EDG DUAL 14TSSOP
CY28346ZI-2
Price: 6.5-8 USD
CYPRESS - Clock Synthesizer with Differential CPU Outputs
PI5V330QEX
Price: 0.284-0.286 USD
PI5V330QEX Pericom Multiplexer Switch ICs
BSM300GA120DN2
Price: 1-2 USD
IGBT power module, Single switch, 1200 V, Collector-emitter voltage, 430A
SVA150XG04TB
Price: 1-2 USD
a-Si TFT-LCD, NEC, 228.096Hmm, 560V
PC354N1
Price: 0.124-0.2 USD
PC354N1T - Mini-flat Package, AC Input Type Photocoupler - Sharp Electrionic Components
RL1210JR-070R22L
Price: 0.177-0.178 USD
RL1210JR51-XX-BL - Thick Film Chip Resistor Low Ohmic - TAITRON Components Incorporated
STPS140A
Price: 0.053-0.055 USD
STPS140A - POWER SCHOTTKY RECTIFIER - STMicroelectronics
STA013
Price: 1.45-1.5 USD
STA013 - MPEG 2.5 LAYER III AUDIO DECODER - STMicroelectronics
SMBJ5347B
Price: 0.073-0.075 USD
SMBJ5347B - 5 Watt Surface Mount Silicon Zener Diodes - Micro Commercial Components
