MTY100N20E, MTY10N100, MTY10N100E Selling Leads, Datasheet
MFG:T Package Cooled:TO D/C:08+
MTY100N20E, MTY10N100, MTY10N100E Datasheet download
Part Number: MTY100N20E
MFG: T
Package Cooled: TO
D/C: 08+
MTY100N20E, MTY10N100, MTY10N100E
- Table of contents:
Info of MTY100N20E
Info of MTY10N100
Info of MTY10N100E
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About MTY100N10E
PDF/DataSheet Download
Datasheet: MTY100N10E
File Size: 221821 KB
Manufacturer: MOTOROLA [Motorola, Inc]
Download : Click here to Download
About MTY10N100E
PDF/DataSheet Download
Datasheet: MTY10N100E
File Size: 234143 KB
Manufacturer: MOTOROLA [Motorola, Inc]
Download : Click here to Download
About MTY10N100E
PDF/DataSheet Download
Datasheet: MTY10N100E
File Size: 234143 KB
Manufacturer: MOTOROLA [Motorola, Inc]
Download : Click here to Download
MTY10N100E General Description
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltageblocking capability without degrading performance over time. In addition, this advanced TMOS EFET is designed to withstand high energy in the avalanche and commutation modes. Designed for high voltage and high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
MTY10N100E Maximum Ratings
|
Rating |
Symbol |
Value |
Unit |
| DraintoSource Voltage |
VDSS |
100 |
Vdc |
| DraintoGate Voltage (RGS = 1.0 M) |
VDGR |
100 |
Vdc |
| GatetoSource Voltage - Continuous - NonRepetitive (tp 10 ms) |
VGS VGSM |
± 20 ± 40 |
Vdc Vpk |
| Drain Current - Continuous @ Tc = 25°C - Single Pulse (tp 10 s) |
ID IDM |
10 30 |
Amps |
| Total Power Dissipation Derate above 25°C |
PD |
250 2.0 |
Watts W/°C |
| Operating and Storage Temperature Range |
TJ, Tstg |
55 to 150 |
°C |
| Single Pulse DraintoSource Avalanche Energy TJ = 25°C (VDD =100Vdc,VGS = 10Vdc, Vdc,Peak IL =10 Apk, L =10 mH, RG = 25) |
EAS |
500 |
mJ |
| Thermal Resistance - Junction to Case - Junction to Ambient |
RJC RJA |
0.5 30 |
°C/W |
| Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds |
TL |
260 |
°C |
curves - representing boundaries on device characteristics - are given to facilitate "worst case" design.
EFET and Designer's are trademarks of Motorola, Inc.
TMOS is a registered trademark of Motorola, Inc.
MTY10N100E Features
• Robust High Voltage Termination
• Avalanche Energy Specified
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
• Avalanche Energy Specified
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
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