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The IPS1051LPb Power Switches (IPS) featuring low side MOSFETs with over-current, over-temperature, ESD protection and drain to source active clamp. The IPS1052G is a dual channel device while the IPS1051 is a single channel. These devices offer protections and the high reliability required in harsh environments. Each switch provides efficient protection by turning OFF the power MOSFET when the temperature exceeds 165°C or when the drain current reaches 3A. The device restarts once the input is cycled. A serial resistance connected to the input provides the diagnostic. The avalanche capability is significantly enhanced by the active clamp and covers most inductive load demagnetizations.
IPS1052GPBF Maximum Ratings
Symbol
Parameter
Min.
Max.
Units
Vds
Maximum drain to source voltage
-0.3
36
V
Vds cont.
Maximum continuous drain to source voltage
28
V
Vin
Maximum input voltage
-0.3
1.3
V
Isd cont.
Max diode continuous current (limited by thermal dissipation)
1.3
W
Pd
Maximum power dissipation (internally limited by thermal protection)
1.25
W
ESD1
Electrostatic discharge voltage (Human body) 100pF, 1500
Between drain and source
Other combinations
4
3
kV
ESD2
Electrostatic discharge voltage (Machine Model) C=200pF,R=0,
Between drain and source
Other combinations
0.5
0.3
kV
Tj max.
Max. storage & operating temperature junction temperature
-40
+150
°C
IPS1052GPBF Features
• Over temperature shutdown Over current shutdown • • Active clamp e • Low current & logic lev l input • ESD protection • Optimized Turn On/Off for EMI • Diagnostic on the input current