MFG:International Rectifier Category:Integrated Circuits (ICs) Package Cooled:SMD D/C:2000
IPS013G, IPS0151, IPS0151S Datasheet download
Category: Integrated Circuits (ICs)
MFG: International Rectifier
Package Cooled: SMD
D/C: 2000
Description: IC MOSFET PWR SWITCH D2PAK
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PDF/DataSheet Download
Datasheet: IPS0151
File Size: 167064 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IPS0151
File Size: 167064 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IPS0151S
File Size: 167064 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
| Technical/Catalog Information | IPS0151 |
| Vendor | International Rectifier |
| Category | Integrated Circuits (ICs) |
| Package / Case | TO-220AB |
| Mounting Type | Through Hole |
| Type | Low Side |
| Voltage - Supply | 4 V ~ 6 V |
| On-State Resistance | 20 mOhm |
| Current - Output / Channel | 4.3A |
| Current - Peak Output | 45A |
| Packaging | Tube |
| Input Type | Non-Inverting |
| Number of Outputs | 1 |
| Operating Temperature | -40°C ~ 150°C |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | IPS0151 IPS0151 |
The IPS0151/IPS0151S are fully protected three terminal SMART POWER MOSFETs that feature over-current, over-temperature, ESD protection and drain to source active clamp.These devices combine a HEXFET® POWER MOSFET and a gate driver. They offer full protection and high reliability required in harsh environments. The driver allows short switching times and provides efficient protection by turning OFF the power MOSFET when the temperature exceeds 165 or when the drain current reaches 35A. The device restarts once the input is cycled. The avalanche capability is significantly enhanced by the active clamp and covers most inductive load demagnetizations.
| Symbol | Parameter | Min. | Max. | Units | Test Conditions |
| Vds | Maximum drain to source voltage | - | 47 | V | |
| Vin | Maximum Input voltage | -0.3 |
7 | ||
| Iin, max | Maximum IN current | -10 | +10 | mA | |
| Isd cont. | Diode max. continuous current rth=62/W IPS0151 |
- | 2.8 | A | |
| rth=5/W IPS015135 | - | 35 | TO220 free air | ||
| rth=80/W IPS0151S | - | 2.2 | TO220 with Rth=5oC/W | ||
| Isd pulsed | Diode max. pulsed current (1) | - | 45 | SMD220 Std footprint | |
| Pd | Maximum power dissipation(1) (rth=62/W) IPS0151 |
- | 2 | W | |
| (rth=80/W) IPS0151S | - | 1.56 | |||
| ESD1 | Electrostatic discharge voltage (Human Body) | - | 4 | kV | C=100pF, R=1500Ω, |
| ESD2 | Electrostatic discharge voltage (Machine Model) | - | 0.5 | C=200pF, R=0Ω, L=10µH | |
| T stor. | Max. storage temperature | -55 | 150 | ||
| Tj max. | Max. junction temperature | -40 | +150 | ||
| Tlead | Lead temperature (soldering, 10 seconds) | - | 300 |
| Technical/Catalog Information | IPS0151S |
| Vendor | International Rectifier |
| Category | Integrated Circuits (ICs) |
| Package / Case | D²Pak, TO-263 (6 leads + tab) |
| Mounting Type | Surface Mount |
| Type | Low Side |
| Voltage - Supply | 4 V ~ 6 V |
| On-State Resistance | 20 mOhm |
| Current - Output / Channel | 3.8A |
| Current - Peak Output | 45A |
| Packaging | Tube |
| Input Type | Non-Inverting |
| Number of Outputs | 1 |
| Operating Temperature | -40°C ~ 150°C |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | IPS0151S IPS0151S |
The IPS0151/IPS0151S are fully protected three terminal SMART POWER MOSFETs that feature over-current, over-temperature, ESD protection and drain to source active clamp.These devices combine a HEXFET® POWER MOSFET and a gate driver. They offer full protection and high reliability required in harsh environments. The driver allows short switching times and provides efficient protection by turning OFF the power MOSFET when the temperature exceeds 165 or when the drain current reaches 35A. The device restarts once the input is cycled. The avalanche capability is significantly enhanced by the active clamp and covers most inductive load demagnetizations.
| Symbol | Parameter | Min. | Max. | Units | Test Conditions |
| Vds | Maximum drain to source voltage | - | 47 | V | |
| Vin | Maximum Input voltage | -0.3 |
7 | ||
| Iin, max | Maximum IN current | -10 | +10 | mA | |
| Isd cont. | Diode max. continuous current rth=62/W IPS0151 |
- | 2.8 | A | |
| rth=5/W IPS015135 | - | 35 | TO220 free air | ||
| rth=80/W IPS0151S | - | 2.2 | TO220 with Rth=5oC/W | ||
| Isd pulsed | Diode max. pulsed current (1) | - | 45 | SMD220 Std footprint | |
| Pd | Maximum power dissipation(1) (rth=62/W) IPS0151 |
- | 2 | W | |
| (rth=80/W) IPS0151S | - | 1.56 | |||
| ESD1 | Electrostatic discharge voltage (Human Body) | - | 4 | kV | C=100pF, R=1500Ω, |
| ESD2 | Electrostatic discharge voltage (Machine Model) | - | 0.5 | C=200pF, R=0Ω, L=10µH | |
| T stor. | Max. storage temperature | -55 | 150 | ||
| Tj max. | Max. junction temperature | -40 | +150 | ||
| Tlead | Lead temperature (soldering, 10 seconds) | - | 300 |
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