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IPS031G, IPS031GTR, IPS031N03L G

Table of contents:
Info of IPS031G
Info of IPS031GTR
Info of IPS031N03L G

IPS031G, IPS031GTR, IPS031N03L G Selling Leads, Datasheet

MFG:International Rectifier Category:Integrated Circuits (ICs) Package Cooled:SOP8 D/C:06+

IPS031G, IPS031GTR, IPS031N03L G Datasheet download

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Part Number: IPS031G

Category: Integrated Circuits (ICs)

MFG: International Rectifier

Package Cooled: SOP8

D/C: 06+

Description: IC MOSFET PWR SW SGL 12A 8-SOIC

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IPS031G Parameters

Technical/Catalog Information	IPS031G
Vendor	International Rectifier
Category	Integrated Circuits (ICs)
Package / Case	8-SOIC (3.9mm Width)
Mounting Type	Surface Mount
Type	Low Side
Voltage - Supply	4 V ~ 6 V
On-State Resistance	45 mOhm
Current - Output / Channel	2.2A
Current - Peak Output	15A
Packaging	Tube
Input Type	Non-Inverting
Number of Outputs	1
Operating Temperature	-40°C ~ 150°C
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IPS031G IPS031G

IPS031G General Description

The IPS031G/IPS032G are fully protected single/dual low side SMART POWER MOSFETs that feature overcurrent, over-temperature, ESD protection and drain to source active clamp.These devices combine a HEXFET® POWER MOSFET and a gate driver. They offer full protection and high reliability required in harsh environments. The driver allows short switching times and provides efficient protection by turning off the power MOSFET when the temperature exceeds 165 or when the drain current reaches 12A. The device restarts once the input is cycled. The avalanche capability is significantly enhanced by the active clamp and covers most inductive load demagnetizations.

IPS031G Maximum Ratings

Symbol	Parameter	Min.	Max.	Units	Test Conditions
V_ds	Maximum drain to source voltage	-	47	V
V_in	Maximum input voltage	-0.3	7	V
I_{in, max}	Maximum IN current	-10	+10	mA
I_{sd cont}.	Diode max. continuous current (1) (rth=125/W) IPS031G (for all sd mosfets, rth=85/W) IPS032G	- -	1.4 2
Isd pulsed	Diode max. pulsed current ⁽¹⁾ (for ea. mosfet)	-	15
P_d	Maximum power dissipation(1) (rth=125/W) IPS031G (for all Pd mosfets, rth=85/W) IPS032G	- -	1 1.5	W
E_SD1	Electrostatic discharge voltage (Human Body)	-	4	kV	C=100pF, R=1500Ω,
E_SD2	Electrostatic discharge voltage (Machine Model)	-	0.5	kV	C=200pF, R=0Ω, L=10µH
T _stor.	Max. storage temperature	-55	150
Tj max.	Max. junction temperature	-40	150

Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are referenced to SOURCE lead. (T_Ambient = 25 unless otherwise specified). PCB mounting uses the standard footprint with 70 µm copper thickness. All Sources leads of each mosfet must be connected together to get full current capability

IPS031G Features

• Over temperature shutdown
• Over current shutdown
• Active clamp
• Low current & logic level input
• E.S.D protection

IPS031G Connection Diagram

IPS031GTR Parameters

Technical/Catalog Information	IPS031GTR
Vendor	International Rectifier
Category	Integrated Circuits (ICs)
Package / Case	8-SOIC (3.9mm Width)
Mounting Type	Surface Mount
Type	Low Side
Voltage - Supply	4 V ~ 6 V
On-State Resistance	45 mOhm
Current - Output / Channel	2.2A
Current - Peak Output	15A
Packaging	Tape & Reel (TR)
Input Type	Non-Inverting
Number of Outputs	1
Operating Temperature	-40°C ~ 150°C
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IPS031GTR IPS031GTR

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