MFG:International Rectifier Category:Integrated Circuits (ICs) Package Cooled:09+ D/C:TO
IPS021, IPS021L, IPS021LLF Datasheet download
Category: Integrated Circuits (ICs)
MFG: International Rectifier
Package Cooled: 09+
D/C: TO
Description: IC MOSFET LS DRIVER 5A SOT-223
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PDF/DataSheet Download
Datasheet: IPS021
File Size: 146347 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IPS021L
File Size: 112724 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IPS0151
File Size: 167064 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
| Technical/Catalog Information | IPS021 |
| Vendor | International Rectifier |
| Category | Integrated Circuits (ICs) |
| Package / Case | TO-220 |
| Mounting Type | Through Hole |
| Type | Low Side |
| Voltage - Supply | 4 V ~ 6 V |
| On-State Resistance | 130 mOhm |
| Current - Output / Channel | 1.8A |
| Current - Peak Output | 10A |
| Packaging | Tube |
| Input Type | Non-Inverting |
| Number of Outputs | 1 |
| Operating Temperature | -40°C ~ 150°C |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | IPS021 IPS021 |
The IPS021/IPS021S are fully protected three terminal SMART POWER MOSFETs that feature over-current, over-temperature, ESD protection and drain to source active clamp.These devices combine a HEXFET® POWER MOSFET and a gate driver. They offer full protection and high reliability required in harsh environments. The driver allows short switching times and provides efficient protection by turning OFF the power MOSFET when the temperature exceeds 165 or when the drain current reaches 5A. These devices restart once the input is cycled. The avalanche capability is significantly enhanced by the active clamp and covers most inductive load demagnetizations.
| Symbol | Parameter | Min. | Max. | Units | Test Conditions |
| Vds | Maximum drain to source voltage | - | 47 | V | |
| Vin | Maximum Input voltage | -0.3 |
7 | ||
| Iin, max | Maximum IN current | -10 | +10 | mA | |
| Isd cont. | Diode max. continuous current rth=62/W IPS021 |
- | 2.8 | A | |
| rth=10/W IPS021 | - | 35 | |||
| rth=80/W IPS021S | - | 2.2 | |||
| Isd pulsed | Diode max. pulsed current (1) | - | 45 | ||
| Pd | Maximum power dissipation(1) (rth=62/W) IPS0151 |
- | 2 | W | |
| (rth=80/W) IPS0151S | - | 1.56 | |||
| ESD1 | Electrostatic discharge voltage (Human Body) | - | 4 | kV | C=100pF, R=1500Ω, |
| ESD2 | Electrostatic discharge voltage (Machine Model) | - | 0.5 | C=200pF, R=0Ω, L=10µH | |
| T stor. | Max. storage temperature | -55 | 150 | ||
| Tj max. | Max. junction temperature | -40 | 150 | ||
| Tlead | Lead temperature (soldering, 10 seconds) | - | 300 |
| Technical/Catalog Information | IPS021L |
| Vendor | International Rectifier |
| Category | Integrated Circuits (ICs) |
| Package / Case | SOT-223, SC-73, TO-261 (3 Leads + Tab) |
| Mounting Type | Surface Mount |
| Type | Low Side |
| Voltage - Supply | 4 V ~ 6 V |
| On-State Resistance | 130 mOhm |
| Current - Output / Channel | 1.4A |
| Current - Peak Output | 10A |
| Packaging | Tube |
| Input Type | Non-Inverting |
| Number of Outputs | 1 |
| Operating Temperature | -40°C ~ 150°C |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | IPS021L IPS021L |
The IPS021L is a fully protected three terminal SMART POWER MOSFET that features over-current, overtemperature, ESD protection and drain to source active clamp.This device combines a HEXFET® POWER MOSFET and a gate driver. It offers full protection and high reliability required in harsh environments. The driver allows short switching times and provides efficient protection by turning OFF the power MOSFET when the temperature exceeds 165 or when the drain current reaches 5A. The device restarts once the input is cycled. The avalanche capability is significantly enhanced by the active clamp and covers most inductive load demagnetizations.
| Symbol | Parameter | Min. | Max. | Units | Test Conditions |
| Vds | Maximum drain to source voltage | - | 47 | V | |
| Vin | Maximum Input voltage | -0.3 | 7 | ||
| Iin, max | Maximum IN current | -10 | +10 | mA | |
| Isd cont. | Diode max. continuous current (1) (rth=125/W) |
- | 1.4 | A | |
| Isd pulsed | Diode max. pulsed current (1) | - | 10 | ||
| Pd | Maximum power dissipation(1) (rth=125/W) |
- | 1 |
W | |
| ESD1 | Electrostatic discharge voltage (Human Body) | - | 4 | kV | C=100pF, R=1500Ω, |
| ESD2 | Electrostatic discharge voltage (Machine Model) | - | 0.5 | C=200pF, R=0Ω, L=10µH | |
| T stor. | Max. storage temperature | -55 | 150 | ||
| Tj max. | Max. junction temperature | -40 | +150 |
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