MFG:International Rectifier Category:Integrated Circuits (ICs) Package Cooled:09+ D/C:01+
IPS022GTR, IPS024G, IPS024S Datasheet download
Category: Integrated Circuits (ICs)
MFG: International Rectifier
Package Cooled: 09+
D/C: 01+
Description: IC MOSFET PWR SW QUAD 12A 16SOIC
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PDF/DataSheet Download
Datasheet: IPS0151
File Size: 167064 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IPS024G
File Size: 104613 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IPS0151
File Size: 167064 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
| Technical/Catalog Information | IPS022GTR |
| Vendor | International Rectifier |
| Category | Integrated Circuits (ICs) |
| Package / Case | 8-SOIC (3.9mm Width) |
| Mounting Type | Surface Mount |
| Type | Low Side |
| Voltage - Supply | 4 V ~ 6 V |
| On-State Resistance | 130 mOhm |
| Current - Output / Channel | 1A |
| Current - Peak Output | 10A |
| Packaging | Tape & Reel (TR) |
| Input Type | Non-Inverting |
| Number of Outputs | 2 |
| Operating Temperature | -40°C ~ 150°C |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | IPS022GTR IPS022GTR |
| Technical/Catalog Information | IPS024G |
| Vendor | International Rectifier |
| Category | Integrated Circuits (ICs) |
| Package / Case | 16-SOIC (3.9mm Width) |
| Mounting Type | Surface Mount |
| Type | Low Side |
| Voltage - Supply | 4 V ~ 6 V |
| On-State Resistance | 135 mOhm |
| Current - Output / Channel | 700mA |
| Current - Peak Output | 10A |
| Packaging | Tube |
| Input Type | Non-Inverting |
| Number of Outputs | 4 |
| Operating Temperature | -40°C ~ 150°C |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | IPS024G IPS024G |
The IPS024G are fully protected quad low side SMART POWER MOSFETs respectively. They feature overcurrent, over-temperature, ESD protection and drain to source active clamp.These devices combine HEXFET® POWER MOSFET and a gate driver. They offer full protection and high reliability required harsh environments. The driver allows short switching times and provides efficient protection by turning OFF the power MOSFET when the temperature exceeds 165 or when the drain current reaches 5A. These devices restart once the input is cycled. The avalanche capability is significantly enhanced by the active clamp and covers most inductive load demagnetizations.
| Symbol | Parameter | Min. | Max. | Units | Test Conditions |
| Vds | Maximum drain to source voltage | - | 47 | V | |
| Vin | Maximum input voltage | -0.3 | 7 | ||
| Iin, max | Maximum IN current | -10 | +10 | mA | |
| Isd cont. | Diode max. continuous current (1) ( lsd mosfets, rth=125/W) |
- | 2.3 | ||
| Isd pulsed | Diode max. pulsed current (1) (for ea. mosfet) | - | 10 | ||
| Pd | Maximum power dissipation(1) ( Pd mosfets, rth=125/W) |
- | 1 | W | |
|
ESD1 |
Electrostatic discharge voltage (Human Body) | - | 4 | kV | C=100pF, R=1500Ω, |
| ESD2 | Electrostatic discharge voltage (Machine Model) | - | 0.5 | C=200pF, R=0Ω, L=10µH | |
| T stor. | Max. storage temperature | -55 | 150 | ||
| Tj max. | Max. junction temperature | -40 | +150 |
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