IPS024G

IC MOSFET PWR SW QUAD 12A 16SOIC

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SeekIC No. : 003566900 Detail

IPS024G: IC MOSFET PWR SW QUAD 12A 16SOIC

floor Price/Ceiling Price

Part Number:
IPS024G
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/17

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Product Details

Quick Details

Series: - Manufacturer: International Rectifier
Type: Low Side Input Type: Non-Inverting
Package / Case : SSOP-20 Number of Outputs: 4
On-State Resistance: 135 mOhm Current - Output / Channel: 700mA
Current - Peak Output: 10A Voltage - Supply: 4 V ~ 6 V
Operating Temperature: -40°C ~ 150°C Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC N    

Description

Series: -
Input Type: Non-Inverting
Mounting Type: Surface Mount
Type: Low Side
Number of Outputs: 4
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOIC N
Operating Temperature: -40°C ~ 150°C
Manufacturer: International Rectifier
Current - Output / Channel: 700mA
On-State Resistance: 135 mOhm
Current - Peak Output: 10A
Voltage - Supply: 4 V ~ 6 V


Features:

• Over temperature shutdown
• Over current shutdown
• Active clamp
• Low current & logic level input
• E.S.D protection



Pinout

  Connection Diagram


Specifications

Symbol Parameter Min. Max. Units Test Conditions
Vds Maximum drain to source voltage - 47 V  
Vin Maximum input voltage -0.3 7  
Iin, max Maximum IN current -10 +10 mA  
Isd cont. Diode max. continuous current (1)
( lsd mosfets, rth=125/W)
- 2.3    
Isd pulsed Diode max. pulsed current (1) (for ea. mosfet) - 10    
Pd Maximum power dissipation(1)
( Pd mosfets, rth=125/W)
- 1 W  

ESD1

Electrostatic discharge voltage (Human Body) - 4 kV C=100pF, R=1500Ω,
ESD2 Electrostatic discharge voltage (Machine Model) - 0.5 C=200pF, R=0Ω, L=10µH
T stor. Max. storage temperature -55 150  
Tj max. Max. junction temperature -40 +150  

Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are referenced to SOURCE lead. (TAmbient = 25 unless otherwise specified). PCB mounting uses the standard footprint with 70 µm copper thickness.


Description

The IPS024G are fully protected quad low side SMART POWER MOSFETs respectively. They feature overcurrent, over-temperature, ESD protection and drain to source active clamp.These devices combine HEXFET® POWER MOSFET and a gate driver. They offer full protection and high reliability required harsh environments. The driver allows short switching times and provides efficient protection by turning OFF the power MOSFET when the temperature exceeds 165 or when the drain current reaches 5A. These devices restart once the input is cycled. The avalanche capability of the IPS024G is significantly enhanced by the active clamp and covers most inductive load demagnetizations.




Parameters:

Technical/Catalog InformationIPS024G
VendorInternational Rectifier
CategoryIntegrated Circuits (ICs)
Package / Case16-SOIC (3.9mm Width)
Mounting TypeSurface Mount
TypeLow Side
Voltage - Supply4 V ~ 6 V
On-State Resistance135 mOhm
Current - Output / Channel700mA
Current - Peak Output10A
PackagingTube
Input TypeNon-Inverting
Number of Outputs4
Operating Temperature-40°C ~ 150°C
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names IPS024G
IPS024G



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