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The IPS031/IPS031S are fully protected three terminal SMART POWER MOSFETs that feature over-current, over-temperature, ESD protection and drain to source active clamp.These devices combine a HEXFET® POWER MOSFET and a gate driver. They offer full protection and high reliability required in harsh environments. The driver allows short switching times and provides efficient protection by turning OFF the power MOSFET when the temperature exceeds 165 or when the drain current reaches 12A. The device restarts once the input is cycled. The avalanche capability is significantly enhanced by the active clamp and covers most inductive load demagnetizations.
IPS031S Maximum Ratings
Symbol
Parameter
Min.
Max.
Units
Test Conditions
Vds
Maximum drain to source voltage
-
47
V
Vin
Maximum input voltage
-0.3
7
Iin, max
Maximum IN current
-10
+10
mA
Isd cont.
Diode max. continuous current (1) rth=62/W IPS031
-
2.8
A
rth=5/W IPS031
-
18
TO220 free air
rth=80/W IPS031S
-
2.2
TO220 with Rth=5/W
Isd pulsed
Diode max. pulsed current (1)
-
18
SMD220 Std. footprint
Pd
Maximum power dissipation(1) (rth=62/W) IPS031
-
2
W
(rth=80/W) IPS031S
-
1.56
ESD1
Electrostatic discharge voltage (Human Body)
-
4
kV
C=100pF, R=1500Ω,
ESD2
Electrostatic discharge voltage (Machine Model)
-
0.5
C=200pF, R=0Ω, L=10µH
T stor.
Max. storage temperature
-55
150
Tj max.
Max. junction temperature
-40
+150
Tlead
Lead temperature (soldering, 10 seconds)
-
300
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are referenced to SOURCE lead. (TAmbient = 25 unless otherwise specified). PCB mounting uses the standard footprint with 70 µm copper thickness.
IPS031S Features
• Over temperature shutdown • Over current shutdown • Active clamp • Low current & logic level input • E.S.D protection