IPS021S

IC MOSFET LS DRIVER 5A D2PAK

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SeekIC No. : 003566899 Detail

IPS021S: IC MOSFET LS DRIVER 5A D2PAK

floor Price/Ceiling Price

Part Number:
IPS021S
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/17

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Product Details

Quick Details

Series: - Manufacturer: International Rectifier
Type: Low Side Input Type: Non-Inverting
Number of Outputs: 1 Package / Case : SSOP-20
On-State Resistance: 130 mOhm Current - Output / Channel: 1.8A
Current - Peak Output: 10A Voltage - Supply: 4 V ~ 6 V
Operating Temperature: -40°C ~ 150°C Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK    

Description

Series: -
Input Type: Non-Inverting
Number of Outputs: 1
Mounting Type: Surface Mount
Type: Low Side
Packaging: Tube
Operating Temperature: -40°C ~ 150°C
Manufacturer: International Rectifier
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Current - Peak Output: 10A
On-State Resistance: 130 mOhm
Current - Output / Channel: 1.8A
Voltage - Supply: 4 V ~ 6 V


Features:

• Over temperature shutdown
• Over current shutdown
• Active clamp
• Low current & logic level input
• E.S.D protection



Pinout

  Connection Diagram




Specifications

Symbol Parameter Min. Max. Units Test Conditions
Vds Maximum drain to source voltage - 47 V  
Vin Maximum Input voltage -0.3
7  
Iin, max Maximum IN current -10 +10 mA  
Isd cont. Diode max. continuous current
rth=62/W IPS021
- 2.8 A  
rth=10/W IPS021 - 35  
rth=80/W IPS021S - 2.2  
Isd pulsed Diode max. pulsed current (1) - 45  
Pd Maximum power dissipation(1)
(rth=62/W) IPS0151
- 2 W  
(rth=80/W) IPS0151S - 1.56  
ESD1 Electrostatic discharge voltage (Human Body) - 4 kV C=100pF, R=1500Ω,
ESD2 Electrostatic discharge voltage (Machine Model) - 0.5 C=200pF, R=0Ω, L=10µH
T stor. Max. storage temperature -55 150  
Tj max. Max. junction temperature -40 150  
Tlead Lead temperature (soldering, 10 seconds) - 300  

Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are referenced to SOURCE lead. (TAmbient = 25 unless otherwise specified). PCB mounting uses the standard footprint with 70 µm copper thickness.


Description

The IPS021S are fully protected three terminal SMART POWER MOSFETs that feature over-current, over-temperature, ESD protection and drain to source active clamp.These devices combine a HEXFET® POWER MOSFET and a gate driver. They offer full protection and high reliability required in harsh environments. The driver allows short switching times and provides efficient protection by turning OFF the power MOSFET when the temperature exceeds 165 or when the drain current reaches 5A. These devices restart once the input is cycled. The avalanche capability of the IPS021S is significantly enhanced by the active clamp and covers most inductive load demagnetizations.




Parameters:

Technical/Catalog InformationIPS021S
VendorInternational Rectifier
CategoryIntegrated Circuits (ICs)
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
Mounting TypeSurface Mount
TypeLow Side
Voltage - Supply4 V ~ 6 V
On-State Resistance130 mOhm
Current - Output / Channel1.8A
Current - Peak Output10A
PackagingTube
Input TypeNon-Inverting
Number of Outputs1
Operating Temperature-40°C ~ 150°C
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names IPS021S
IPS021S



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