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IPS022, IPS0226G, IPS022G

Table of contents:
Info of IPS022
Info of IPS0226G
Info of IPS022G

IPS022, IPS0226G, IPS022G Selling Leads, Datasheet

MFG:International Rectifier Category:Integrated Circuits (ICs) Package Cooled:SOP-8 D/C:08+

IPS022, IPS0226G, IPS022G Datasheet download

Five Points

Part Number: IPS022G

Category: Integrated Circuits (ICs)

MFG: International Rectifier

Package Cooled: SOP-8

D/C: 08+

Description: IC MOSFET LS DRIVER DUAL 8-SOIC

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IPS022G Parameters

Technical/Catalog Information	IPS022G
Vendor	International Rectifier
Category	Integrated Circuits (ICs)
Package / Case	8-SOIC (3.9mm Width)
Mounting Type	Surface Mount
Type	Low Side
Voltage - Supply	4 V ~ 6 V
On-State Resistance	130 mOhm
Current - Output / Channel	1A
Current - Peak Output	10A
Packaging	Tube
Input Type	Non-Inverting
Number of Outputs	2
Operating Temperature	-40°C ~ 150°C
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IPS022G IPS022G

IPS022G General Description

The IPS022G are fully protected dual low side SMART POWER MOSFETs respectively. They feature overcurrent, over-temperature, ESD protection and drain to source active clamp.These devices combine a HEXFET® POWER MOSFET and a gate driver. They offer full protection and high reliability required in harsh environments. The driver allows short switching times and provides efficient protection by turning OFF the power MOSFET when the temperature exceeds 165oC or when the drain current reaches 5A. These devices restart once the input is cycled. The avalanche capability is significantly enhanced by the active clamp and covers most inductive load demagnetizations.

IPS022G Maximum Ratings

Symbol	Parameter	Min.	Max.	Units	Test Conditions
V_ds	Maximum drain to source voltage	-	47	V
V_in	Maximum input voltage	-0.3	7	V
I_{in, max}	Maximum IN current	-10	+10	mA
I_{sd cont}.	Diode max. continuous current⁽¹⁾( lsd mosfets, rth=125oC/W)	-	1.4
Isd pulsed	Diode max. pulsed current ⁽¹⁾ (for ea. mosfet)	-	10
P_d	Maximum power dissipation⁽¹⁾ ( Pd mosfets, rth=125oC/W)	-	1	W
E_SD1	Electrostatic discharge voltage (Human Body)	-	4	kV	C=100pF, R=1500Ω,
E_SD2	Electrostatic discharge voltage (Machine Model)	-	0.5	kV	C=200pF, R=0Ω, L=10µH
T _stor.	Max. storage temperature	-55	150
Tj max.	Max. junction temperature	-40	+150

Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are referenced to SOURCE lead. (T_Ambient = 25 unless otherwise specified). PCB mounting uses the standard footprint with 70 µm copper thickness.

IPS022G Features

• Over temperature shutdown
• Over current shutdown
• Active clamp
• Low current & logic level input
• E.S.D protection

IPS022G Connection Diagram

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