IPS022G

Power Driver ICs IPS 1 Ch Low Side Driver

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IPS022G Picture
SeekIC No. : 00537324 Detail

IPS022G: Power Driver ICs IPS 1 Ch Low Side Driver

floor Price/Ceiling Price

US $ .91~1.86 / Piece | Get Latest Price
Part Number:
IPS022G
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $1.86
  • $1.27
  • $.95
  • $.91
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/17

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Product Details

Quick Details

Product : H-Bridge Drivers Type : Low Side
Rise Time : 0.9 us Fall Time : 1.3 us
Supply Voltage - Max : 6 V Supply Voltage - Min : 4 V
Supply Current : 10 mA Maximum Power Dissipation : 1 W
Mounting Style : SMD/SMT Package / Case : SOIC-8
Packaging : Tube    

Description

Maximum Operating Temperature :
Mounting Style : SMD/SMT
Supply Voltage - Min : 4 V
Package / Case : SOIC-8
Packaging : Tube
Product : H-Bridge Drivers
Type : Low Side
Maximum Power Dissipation : 1 W
Supply Current : 10 mA
Supply Voltage - Max : 6 V
Rise Time : 0.9 us
Fall Time : 1.3 us


Features:

• Over temperature shutdown
• Over current shutdown
• Active clamp
• Low current & logic level input
• E.S.D protection



Pinout

  Connection Diagram


Specifications

Symbol Parameter Min. Max. Units Test Conditions
Vds Maximum drain to source voltage - 47 V  
Vin Maximum input voltage -0.3 7  
Iin, max Maximum IN current -10 +10 mA  
Isd cont. Diode max. continuous current (1)
( lsd mosfets, rth=125oC/W)
- 1.4    
Isd pulsed Diode max. pulsed current (1) (for ea. mosfet) - 10    
Pd Maximum power dissipation(1)
( Pd mosfets, rth=125oC/W)
- 1 W  

ESD1

Electrostatic discharge voltage (Human Body) - 4 kV C=100pF, R=1500Ω,
ESD2 Electrostatic discharge voltage (Machine Model) - 0.5 C=200pF, R=0Ω, L=10µH
T stor. Max. storage temperature -55 150  
Tj max. Max. junction temperature -40 +150  

Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are referenced to SOURCE lead. (TAmbient = 25 unless otherwise specified). PCB mounting uses the standard footprint with 70 µm copper thickness.


Description

The IPS022G are fully protected dual low side SMART POWER MOSFETs respectively. They feature overcurrent, over-temperature, ESD protection and drain to source active clamp.These devices combine a HEXFET® POWER MOSFET and a gate driver. They offer full protection and high reliability required in harsh environments. The driver allows short switching times and provides efficient protection by turning OFF the power MOSFET when the temperature exceeds 165oC or when the drain current reaches 5A. These devices restart once the input is cycled. The avalanche capability of the IPS022G is significantly enhanced by the active clamp and covers most inductive load demagnetizations.




Parameters:

Technical/Catalog InformationIPS022G
VendorInternational Rectifier
CategoryIntegrated Circuits (ICs)
Package / Case8-SOIC (3.9mm Width)
Mounting TypeSurface Mount
TypeLow Side
Voltage - Supply4 V ~ 6 V
On-State Resistance130 mOhm
Current - Output / Channel1A
Current - Peak Output10A
PackagingTube
Input TypeNon-Inverting
Number of Outputs2
Operating Temperature-40°C ~ 150°C
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names IPS022G
IPS022G



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