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The IPS0551T is a fully protected three terminal SMART POWER MOSFET that features over-current, over-temperature, ESD protection, and drain to source active clamp. This device combines a HEXFET® POWER MOSFET and a gate driver. It offers full protection and high reliability required in harsh environments. The driver allows short switching times and provides efficient protection by turning OFF the power MOSFET when temperature exceeds 165oC or when the drain current reaches 100A. The device restarts once the input is cycled. The avalanche capability is significantly enhanced by the active clamp and covers most inductive load demagnetizations.
IPS0551T Maximum Ratings
Symbol
Parameter
Min.
Max.
Units
Test Conditions
Vds
Maximum drain to source voltage
-
37
mA
Vin
Maximum input voltage
-0.3
7
V
I+in
Maximum IN current
-10
+10
mA
Isd cont.
Diode max. continuous current (1) (rth=60oC/W) (rth=5oC/W)
-
2.8
A
35
Isd pulsed
Diode max. pulsed current (1)
-
100
Pd
Maximum power dissipation(1) (rth=60oC/W)
-
2
W
C=100pF, R=1500,
ESD1
Electrostatic discharge voltage (Human Body)
-
4
kV
C=200pF, R=0, L=10H
ESD2
Electrostatic discharge voltage (Machine Model)
-
0.5
Tj max.
Max. storage & operating junction temp.
-40
+150
oC
Tlead
Lead temperature (soldering, 10 seconds)
-
300
IPS0551T Features
• Over temperature shutdown • Over current shutdown • Active clamp • Low current & logic level input • E.S.D protection