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IKP20N60T, IKW03N120H2, IKW08T120

Table of contents:
Info of IKP20N60T
Info of IKW03N120H2
Info of IKW08T120

IKP20N60T, IKW03N120H2, IKW08T120 Selling Leads, Datasheet

MFG:INF Package Cooled:TO-247 D/C:09+

IKP20N60T, IKW03N120H2, IKW08T120 Picture

IKP20N60T, IKW03N120H2, IKW08T120 Datasheet download

Five Points

Part Number: IKP20N60T

MFG: INF

Package Cooled: TO-247

D/C: 09+

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IKP20N60T Maximum Ratings

Parameter	Symbol	Value	Unit
Collector-emitter voltage	V_CE	600	V
DC collector current, limited by Tjmax T_C = 25°C T_C = 100°C	I_C	40 20	A
Pulsed collector current, tp limited by Tjmax	I_Cpuls	60	A
Turn off safe operating area (V_CE 600V, T_j 175°C)	-	60	A
Diode forward current, limited by T_jmax T_C = 25°C T_C = 100°C	I_F	40 20	A
Diode pulsed current, tp limited by Tjmax	I_Fpuls	60	A
Gate-emitter voltage	V_GE	±20	V
Short circuit withstand time2) V_GE = 15V, V_CC 400V, T_j 150°C	t_SC	5	s
Power dissipation T_C = 25°C	P_tot	166	W
Operating junction temperature	T_j	-40...+175	°C
Storage temperature	T_stg	-55...+175	°C
Soldering temperature, 1.6mm (0.063 in.) from case for 10s	-	260	°C

1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.

IKP20N60T Features

• Very low V_CE(sat) 1.5 V (typ.)
• Maximum Junction Temperature 175 °C
• Short circuit withstand time 5s
• Designed for :
- Frequency Converters
- Uninterrupted Power Supply
• Trench and Fieldstop technology for 600 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
- low V_CE(sat)
• Positive temperature coefficient in VCE(sat)
• Low EMI
• Low Gate Charge
• Very soft, fast recovery anti-parallel EmCon HE diode
• Qualified according to JEDEC¹ for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

IKW08T120 Maximum Ratings

Parameter	Symbol	Value	Unit
Collector-emitter voltage	V_CE	1200	V
DC collector current T_C = 25 T_C= 100	I_C	16 8	A
Pulsed collector current, tp limited by Tjmax	I_Cpuls	24
urn off safe operating area V_CE 1200V, T_j 150	-	-
Diode forward current T_C = 25 T_C= 100	I_F	16 8
Diode pulsed current, tp limited by Tjmax	I_Fpuls	24
Gate-emitter voltage	V_GE	±20	V
Short circuit withstand time1)	t_SC	10	µs
Power dissipation T_C= 25	Pt o t	70	W
Operating junction temperature	Tj	-40...+150
Storage temperature	Ts tg	-55...+150
Soldering temperature, 1.6mm (0.063 in.) from case for 10s	-	250

IKW08T120 Features

• Approx. 1.0V reduced V_CE(sat) and 0.5V reduced VF compared to BUP305D
• Short circuit withstand time - 10µs
• Designed for :
- Frequency Converters
- Uninterrupted Power Supply
• Trench and Fieldstop technology for 1200 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
• NPT technology offers easy parallel switching capability due to positive temperature coefficient in V_CE(sat)• Low EMI
• Low Gate Charge
• Very soft, fast recovery anti-parallel EmCon HE diode
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt

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